TIP33C is an NPN silicon high-power transistor in a TO-247 package, designed for general purpose power amplification and switching applications. It has a collector-emitter sustaining voltage of 100 V minimum, a continuous collector current rating of 10 A, and a peak collector current of 15 A. The device dissipates up to 80 W at 25°C with a thermal resistance of 1.56°C/W. It has a DC current gain of 40 minimum at 1.0 A collector current and a current gain-bandwidth product of 3 MHz minimum at 0.5 A. The maximum junction temperature is 150°C. The collector-emitter saturation voltage is up to 4.0 V at 10 A collector current and 2.5 A base current. The base-emitter on voltage is up to 3.0 V at 10 A collector current and 4 V collector-emitter voltage.
TRANS NPN 100V 10A TO218 Product overview: TIP33C from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 10A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 10A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TIP33C can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-TIP33C |
| Product Name | 100V 10A Bipolar Transistor |
| Package Type | Bag |
