NTE31 is an NPN silicon transistor designed for TV sound and vertical deflection output applications. It is housed in a through-hole package with three pins, measuring 13.0 mm in length, 5.08 mm in pin pitch, and 2.54 mm between lead centers. The collector-emitter voltage is 160 V, the continuous collector current is 1 A, and the power dissipation is 900 mW. The DC current gain ranges from 100 to 200, the collector-emitter saturation voltage is up to 1.5 V at 500 mA collector current and 50 mA base current, and the transition frequency is 100 MHz at 5 V and 200 mA. The junction temperature rating is +150 °C, and the storage temperature range is -55 °C to +150 °C.
Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:1A; Power Dissipation:900mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:100MHz; DC Current Gain hFE Min:200hFE RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 05H5744 |
| Product Name | Transistor Polarity Nte Electronics |
| Transistor Type | Transistor Polarity Nte Electronics |
