NTE Electronics, Inc. INTEGRATED CIRCUIT EPROM NMOS 16K 350NS24-LEAD DIP UV ERASABLE NTE2716

Description
The NTE2716 is a 16,384-bit (2048 × 8-bit) Erasable and Electrically Reprogrammable PROM in a 24-Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows the memory content to be erased with ultraviolet light. The NTE2716 operates from a single power supply and has a static power down mode. Features: Single 5 V Power Supply Automatic Power-Down Mode (Standby) Organized as 2048 Bytes of 8-Bits TTL Compatible During Read and Program Access Time: 350 ns Output Enable Active Level is User Selectable
Description
The NTE2716 is a 16,384-bit (2048 × 8-bit) Erasable and Electrically Reprogrammable PROM in a 24-Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows the memory content to be erased with ultraviolet light. The NTE2716 operates from a single power supply and has a static power down mode. Features: Single 5 V Power Supply Automatic Power-Down Mode (Standby) Organized as 2048 Bytes of 8-Bits TTL Compatible During Read and Program Access Time: 350 ns Output Enable Active Level is User Selectable

Suppliers

Company
Product
Description
Supplier Links
INTEGRATED CIRCUIT EPROM NMOS 16K 350NS24-LEAD DIP UV ERASABLE - 70215995 - Allied Electronics, Inc.
Fort Worth, TX, USA
INTEGRATED CIRCUIT EPROM NMOS 16K 350NS24-LEAD DIP UV ERASABLE
70215995
INTEGRATED CIRCUIT EPROM NMOS 16K 350NS24-LEAD DIP UV ERASABLE 70215995
The NTE2716 is a 16,384-bit (2048 × 8-bit) Erasable and Electrically Reprogrammable PROM in a 24-Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows the memory content to be erased with ultraviolet light. The NTE2716 operates from a single power supply and has a static power down mode. Features: Single 5 V Power Supply Automatic Power-Down Mode (Standby) Organized as 2048 Bytes of 8-Bits TTL Compatible During Read and Program Access Time: 350 ns Output Enable Active Level is User Selectable

The NTE2716 is a 16,384-bit (2048 × 8-bit) Erasable and Electrically Reprogrammable PROM in a 24-Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows
the memory content to be erased with ultraviolet light. The NTE2716 operates from a single power supply and has a static power down mode.
Features:

  • Single 5 V Power Supply
  • Automatic Power-Down Mode (Standby)
  • Organized as 2048 Bytes of 8-Bits
  • TTL Compatible During Read and Program
  • Access Time: 350 ns
  • Output Enable Active Level is User Selectable
Supplier's Site

Technical Specifications

  Allied Electronics, Inc.
Product Category Memory Chips
Product Number 70215995
Product Name INTEGRATED CIRCUIT EPROM NMOS 16K 350NS24-LEAD DIP UV ERASABLE
Memory Category EPROM
Access Time 350 ns
Operating Temperature 0 to ? C (32 to ? F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CY7C293AL-35WC - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 35 ns
Density 16 kbits
View Details
Memory - Controllers - DP8422ATVX-25 - Lingto Electronic Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
View Details
2 suppliers
Flash Memory - 1882878 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details