NTE Electronics, Inc. POWER MOSFET N-CHANNEL 1000V ID=3.1A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT M NTE2399

Description
N-Channel Enhancement Mode MOSFET, 3.1 Amps, 125 Watts, -55°C to +150°C, M3 Screw Mounting Dynamic dv⁄dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements
Description
N-Channel Enhancement Mode MOSFET, 3.1 Amps, 125 Watts, -55°C to +150°C, M3 Screw Mounting Dynamic dv⁄dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements

Suppliers

Company
Product
Description
Supplier Links
POWER MOSFET N-CHANNEL 1000V ID=3.1A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT M - 70215911 - Allied Electronics, Inc.
Fort Worth, TX, USA
POWER MOSFET N-CHANNEL 1000V ID=3.1A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT M
70215911
POWER MOSFET N-CHANNEL 1000V ID=3.1A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT M 70215911
N-Channel Enhancement Mode MOSFET, 3.1 Amps, 125 Watts, -55°C to +150°C, M3 Screw Mounting Dynamic dv⁄dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements

N-Channel Enhancement Mode MOSFET, 3.1 Amps, 125 Watts, -55°C to +150°C, M3 Screw Mounting

  • Dynamic dv⁄dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTE2399 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTE2399
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTE2399
MOSFET N-CHANNEL 1KV 3.1A TO220

MOSFET N-CHANNEL 1KV 3.1A TO220

Supplier's Site

Technical Specifications

  Allied Electronics, Inc. Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 70215911 NTE2399
Product Name POWER MOSFET N-CHANNEL 1000V ID=3.1A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT M Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 1000 volts
Transconductance 0.0021 kS
rDS(on) 0.5000 ohms
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