N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 9 A @ +25 °C
MOSFET N-CHANNEL 500V 10A TO3P
N CHANNEL MOSFET, 500V, 9A, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Allied Electronics, Inc. | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 70216019 | NTE2393 | 06M7397 |
| Product Name | POWER MOSFET N-CHANNEL 500V ID=9A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 500V, 9A, To-3P; Channel Type Nte Electronics |
| Polarity | N-Channel | N-Channel | |
| V(BR)DSS | 500 volts | ||
| Transconductance | 0.0050 kS | ||
| rDS(on) | 0.7000 ohms |