NTE Electronics, Inc. POWER MOSFET N-CHANNEL 100V ID-33A TO-3CASE HIGH SPEED SWITCH ENHANCEMENT MODE NTE2392

Description
N-Channel Enhancement Mode MOSFET, Continuous Drain Current 40 A @ +25 °C Fast switching Low drive current Ease of paralleling No second breakdown Excellent temperature stability The NTE2392 is an N-Channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.
  • POWER MOSFET N-CHANNEL 100V ID-33A TO-3CASE HIGH SPEED SWITCH ENHANCEMENT MODE - 70215357 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • N Channel Mosfet, 100V, 40A, To-3; Channel Type Nte Electronics - 31C3599 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTE2392 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Description
N-Channel Enhancement Mode MOSFET, Continuous Drain Current 40 A @ +25 °C Fast switching Low drive current Ease of paralleling No second breakdown Excellent temperature stability The NTE2392 is an N-Channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.

Suppliers

Company
Product
Description
Supplier Links
POWER MOSFET N-CHANNEL 100V ID-33A TO-3CASE HIGH SPEED SWITCH ENHANCEMENT MODE - 70215357 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
POWER MOSFET N-CHANNEL 100V ID-33A TO-3CASE HIGH SPEED SWITCH ENHANCEMENT MODE
70215357
POWER MOSFET N-CHANNEL 100V ID-33A TO-3CASE HIGH SPEED SWITCH ENHANCEMENT MODE 70215357
N-Channel Enhancement Mode MOSFET, Continuous Drain Current 40 A @ +25 °C Fast switching Low drive current Ease of paralleling No second breakdown Excellent temperature stability The NTE2392 is an N-Channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.

N-Channel Enhancement Mode MOSFET, Continuous Drain Current 40 A @ +25 °C

  • Fast switching
  • Low drive current
  • Ease of paralleling
  • No second breakdown
  • Excellent temperature stability
    The NTE2392 is an N-Channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.
Supplier's Site
N Channel Mosfet, 100V, 40A, To-3; Channel Type Nte Electronics - 31C3599 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 40A, To-3; Channel Type Nte Electronics
31C3599
N Channel Mosfet, 100V, 40A, To-3; Channel Type Nte Electronics 31C3599
N CHANNEL MOSFET, 100V, 40A, TO-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 40A, TO-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTE2392 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTE2392
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTE2392
MOSFET N-CHANNEL 100V 40A TO3

MOSFET N-CHANNEL 100V 40A TO3

Supplier's Site

Technical Specifications

  Allied Electronics, Inc. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 70215357 31C3599 NTE2392
Product Name POWER MOSFET N-CHANNEL 100V ID-33A TO-3CASE HIGH SPEED SWITCH ENHANCEMENT MODE N Channel Mosfet, 100V, 40A, To-3; Channel Type Nte Electronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
V(BR)DSS 100 volts
Transconductance 0.0110 kS
rDS(on) 0.0450 ohms
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