NTE Electronics, Inc. Transistor NTE2377

Description

N CHANNEL MOSFET, 900V, 8A, TO-3P; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON). FREE 2 YEAR RADWELL WARRANTY

Radwell International
Allied Electronics, Inc.

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Description

N CHANNEL MOSFET, 900V, 8A, TO-3P; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON). FREE 2 YEAR RADWELL WARRANTY

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Description

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Radwell International

Willingboro, NJ, United States

Transistor
18719932

Transistor 18719932

N CHANNEL MOSFET, 900V, 8A, TO-3P; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON). FREE 2 YEAR RADWELL WARRANTY

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Allied Electronics, Inc.

Fort Worth, TX, USA

POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE
70215905

POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE 70215905

N-Channel Enhancement Mode MOSFET, Drain to Source Breakdown Voltage 900 V, Drain Current 8 A Low on-state resistance Very high-speed switching Converters The NTE2377 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.

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Technical Specifications

	Radwell International	Allied Electronics, Inc.
Product Category	RF Transistors	Metal-Oxide Semiconductor FET (MOSFET)
Product Number	18719932	70215905
Product Name	Transistor	POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE
Polarity		N-Channel
V_(BR)DSS		900 volts
Transconductance		0.0050 kS