NTE Electronics, Inc. Transistor NTE2377

Description
N CHANNEL MOSFET, 900V, 8A, TO-3P; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON). FREE 2 YEAR RADWELL WARRANTY
Description
N CHANNEL MOSFET, 900V, 8A, TO-3P; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON). FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 18719932 - Radwell International
Willingboro, NJ, United States
Transistor
18719932
Transistor 18719932
N CHANNEL MOSFET, 900V, 8A, TO-3P; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON). FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 900V, 8A, TO-3P; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON). FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE - 70215905 - Allied Electronics, Inc.
Fort Worth, TX, USA
POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE
70215905
POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE 70215905
N-Channel Enhancement Mode MOSFET, Drain to Source Breakdown Voltage 900 V, Drain Current 8 A Low on-state resistance Very high-speed switching Converters The NTE2377 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.

N-Channel Enhancement Mode MOSFET, Drain to Source Breakdown Voltage 900 V, Drain Current 8 A

  • Low on-state resistance
  • Very high-speed switching
  • Converters
    The NTE2377 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.
Supplier's Site

Technical Specifications

  Radwell International Allied Electronics, Inc.
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 18719932 70215905
Product Name Transistor POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE
Polarity N-Channel
V(BR)DSS 900 volts
Transconductance 0.0050 kS
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