NTE Electronics, Inc. POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE NTE2377

Description
N-Channel Enhancement Mode MOSFET, Drain to Source Breakdown Voltage 900 V, Drain Current 8 A Low on-state resistance Very high-speed switching Converters The NTE2377 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.
  • POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE - 70215905 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Transistor - 18719932 - Radwell International
    Radwell International
Description
N-Channel Enhancement Mode MOSFET, Drain to Source Breakdown Voltage 900 V, Drain Current 8 A Low on-state resistance Very high-speed switching Converters The NTE2377 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.

Suppliers

Company
Product
Description
Supplier Links
POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE - 70215905 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE
70215905
POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE 70215905
N-Channel Enhancement Mode MOSFET, Drain to Source Breakdown Voltage 900 V, Drain Current 8 A Low on-state resistance Very high-speed switching Converters The NTE2377 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.

N-Channel Enhancement Mode MOSFET, Drain to Source Breakdown Voltage 900 V, Drain Current 8 A

  • Low on-state resistance
  • Very high-speed switching
  • Converters
    The NTE2377 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.
Supplier's Site
Transistor - 18719932 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
18719932
Transistor 18719932
N CHANNEL MOSFET, 900V, 8A, TO-3P; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON). FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 900V, 8A, TO-3P; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:8A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON). FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Allied Electronics, Inc. Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 70215905 18719932
Product Name POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE Transistor
Polarity N-Channel
V(BR)DSS 900 volts
Transconductance 0.0050 kS
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