NTE Electronics, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single NTE2323

Description
Win Source Part Number: 1081625-NTE2323 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bag Standard Package: 1 Power - Max: 750 mW Voltage - Collector Emitter Breakdown (Max): 200 V Current - Collector (Ic) (Max): 500 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 80MHz Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): MC1413BDR2G; ULN2003A; KSP42TA; MJE350STU; ULN2804A; ULN2803A; ECCN: EAR99 Fake Threat In the Open Market: 80 pct. HTSUS: 8541.29.0095 Mfr: NTE Electronics, Inc Other Names: 2368-NTE2323 RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 1081625-NTE2323 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bag Standard Package: 1 Power - Max: 750 mW Voltage - Collector Emitter Breakdown (Max): 200 V Current - Collector (Ic) (Max): 500 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 80MHz Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): MC1413BDR2G; ULN2003A; KSP42TA; MJE350STU; ULN2804A; ULN2803A; ECCN: EAR99 Fake Threat In the Open Market: 80 pct. HTSUS: 8541.29.0095 Mfr: NTE Electronics, Inc Other Names: 2368-NTE2323 RoHS Status: RoHS non-compliant
Request a Quote Datasheet

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1081625-NTE2323 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1081625-NTE2323
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1081625-NTE2323
Win Source Part Number: 1081625-NTE2323 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bag Standard Package: 1 Power - Max: 750 mW Voltage - Collector Emitter Breakdown (Max): 200 V Current - Collector (Ic) (Max): 500 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 80MHz Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): MC1413BDR2G; ULN2003A; KSP42TA; MJE350STU; ULN2804A; ULN2803A; ECCN: EAR99 Fake Threat In the Open Market: 80 pct. HTSUS: 8541.29.0095 Mfr: NTE Electronics, Inc Other Names: 2368-NTE2323 RoHS Status: RoHS non-compliant

Win Source Part Number: 1081625-NTE2323
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bag
Standard Package: 1
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 500 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 80MHz
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-DIP
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): MC1413BDR2G; ULN2003A; KSP42TA; MJE350STU; ULN2804A; ULN2803A;
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
HTSUS: 8541.29.0095
Mfr: NTE Electronics, Inc
Other Names: 2368-NTE2323
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NTE2323 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NTE2323
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NTE2323
TRANS NPN 200V 0.5A 14DIP

TRANS NPN 200V 0.5A 14DIP

Supplier's Site

Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 1081625-NTE2323 NTE2323
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3
IC(max) 500 milliamps 500 milliamps
Power Gain 40 dB
Operating Frequency 80 MHz
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