The MPSA12 is a silicon NPN Darlington transistor designed for general-purpose amplification and switching applications in a TO-92 package. It has a collector-emitter voltage rating of 20V, a continuous collector current of 1.2A, and a total device dissipation of 625mW at +25°C. The junction-to-ambient thermal resistance is 200°C/W. The device exhibits a minimum DC current gain (hFE) of 20,000 at IC = 10mA and VCE = 5V, with a collector-emitter saturation voltage of 1.0V max and a base-emitter on-voltage of 1.4V max. Operating and storage junction temperatures range from -55°C to +150°C. The package dimensions conform to standard TO-92 form factor with a maximum height of 5.33mm, a body diameter of 4.2mm, and lead spacing of 2.54mm.
TRANS NPN DARL 20V TO92 Product overview: MPSA12 from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include transistor, BJT, switching, amplification, 20V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MPSA12 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MPSA12 |
| Product Name | 20V Bipolar Transistor |
| Package Type | Bag |
