The MJE3055T is an NPN silicon power transistor in a TO-220 plastic package for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 10 A, and a total power dissipation of 75 W at 25°C, derating at 0.6 W/°C above that temperature. The junction temperature range is -55°C to +150°C, with a maximum thermal resistance from junction to case of 1.67°C/W. Electrical characteristics include a DC current gain of 5 to 100 at collector currents of 10 A and 4 A, respectively, a collector-emitter saturation voltage of up to 8.0 V at 10 A collector and 3.3 A base current, and a current gain-bandwidth product of 2 MHz. The package dimensions match the TO-220 standard form factor.
TRANS NPN 60V 10A TO220 Product overview: MJE3055T from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 10A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE3055T can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MJE3055T |
| Product Name | 60V 10A TO220 Bipolar Transistor |
| Package Type | Bag |
