The MJE182 is a silicon NPN bipolar transistor designed for high-current switching applications. It is packaged in a TO-126LP case with dimensions of 15.5 mm in length, 11.0 mm in width, and 8.0 mm in height. The device has a collector-emitter voltage rating of 80 V, a continuous collector current of 3 A, and a peak collector current of 6 A. It achieves a DC current gain of 50 to 250 at 100 mA collector current, with saturation voltage as low as 0.3 V at 500 mA collector and 50 mA base current. The operating junction temperature range is -65°C to +150°C, and thermal resistance from junction to case is 10°C/W. The transistor meets standard industry specifications for high current and thermal performance.
TRANS NPN 80V 3A SOT32-3 Product overview: MJE182 from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE182 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MJE182 |
| Product Name | 80V 3A Bipolar Transistor |
| Package Type | Bag |
