The MJ10015 is a silicon NPN Darlington transistor in a TO-3 package for high-voltage, high-speed power switching. It has a collector-emitter sustaining voltage of 400V, a continuous collector current of 50A, and a peak collector current of 75A. The emitter-base voltage is 8.0V. Power dissipation is 250W at 25°C, derating at 1.43W/°C. Thermal resistance is 0.7°C/W. Operating and storage junction temperatures range from -65°C to +200°C. DC current gain is minimum 25 at 20A and 5V. Collector-emitter saturation voltage is up to 2.2V at 20A and 1A base current. Output capacitance is 750pF at 10V. Switching times: delay 0.3µs, rise 1.0µs, storage 2.5µs, fall 1.0µs. Package height is 1.187 inches, base-to-emitter spacing is 0.875 inches.
TRANS NPN DARL 400V 50A TO3 Product overview: MJ10015 from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 50A. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 50A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJ10015 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MJ10015 |
| Product Name | 400V 50A Bipolar Transistor |
| Package Type | Bag |
