NTE Electronics, Inc. Transistor 2N6727

The 2N6727 is a silicon PNP transistor designed for general-purpose power amplification and switching applications. It comes in a TO-237 type package and has a maximum collector-emitter voltage of 40V and a collector-base voltage of 50V. The transistor can handle continuous collector currents up to 2A and continuous base currents of 500mA, with a power dissipation rating of 1W at an ambient temperature of 25¬8C. The device operates within a junction temperature range of -65¬8C to +150¬8C and features a thermal resistance of 125¬8C/W from junction to ambient. Key electrical characteristics include a DC current gain (hFE) ranging from 50 to 250 at a collector current of 1A, and a collector-emitter saturation voltage of 0.5V at 1A. The transition frequency is specified at a minimum of 50MHz, making it suitable for high-frequency applications. This transistor is not RoHS compliant, which may be a consideration for certain projects.