The 2N5686 is a silicon NPN power transistor in a TO-3 package, designed for high-current switching and amplifier applications. It has a continuous collector current rating of 50 A, a collector-emitter voltage rating of 80 V, and a total device dissipation of 300 W at 25°C. The DC current gain ranges from 15 to 60 at 25 A collector current. Collector-emitter saturation voltage is 1 V maximum at 25 A collector and 2.5 A base current. Thermal resistance from junction to case is 0.584°C/W. Operating junction and storage temperature ranges are -65°C to +200°C. The device meets no specified industry standards beyond its electrical and thermal ratings.
TRANS NPN 80V 50A TO204 Product overview: 2N5686 from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 50A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 50A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5686 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N5686 |
| Product Name | 80V 50A Bipolar Transistor |
| Package Type | Bag |
