The 2N5195 is a silicon PNP bipolar transistor in a TO-126 plastic package designed for audio power amplifier and switching applications. It has a collector-emitter voltage rating of 80 V and a maximum collector current of 4 A. The device supports a total power dissipation of 40 W at 25°C, derating at 320 mW/°C, with an operating junction temperature range of -65°C to +150°C. Thermal resistance from junction to case is 3.12°C/W. Electrical characteristics include a DC current gain (hFE) of 7 to 80 at 1.5 A to 4 A collector current, collector-emitter saturation voltage of up to 1.4 V at 4 A collector current and 1 A base current, and a current gain-bandwidth product of 2.0 MHz. The package dimensions are 16.6 mm maximum length, 11.4 mm maximum width, and 8.38 mm maximum height, with a 3.0 mm diameter emitter lead.
TRANS PNP 80V 4A SOT32-3 Product overview: 2N5195 from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5195 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N5195 |
| Product Name | 80V 4A Bipolar Transistor |
| Package Type | Bag |
