The 2N3819 is an N-channel JFET transistor for RF amplifier and mixer applications up to 450 MHz, housed in a TO-92 package with dimensions of 5.2 mm maximum length and 2.67 mm maximum width. It has a drain-gate voltage rating of 25 V, a gate-source voltage rating of -25 V, and a maximum drain current of 50 mA. Total device dissipation is 350 mW at 25°C, with a derating of 2.8 mW/°C above this temperature. The device meets a storage temperature range of -55°C to 150°C and has a junction-to-ambient thermal resistance of 35°C/W. Electrical characteristics include a zero-gate voltage drain current of 2.0 to 20 mA, input capacitance up to 8.0 pF, and reverse transfer capacitance up to 4.0 pF.
RF MOSFET JFET TO92-3 Product overview: 2N3819 from NTE Electronics, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2N3819 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-2N3819 |
| Product Name | MOSFET Transistor |
| Package Type | Bag |
