Northrop Grumman Corporation Radiation Hardened and High Temperature EEPROMS

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Radiation Hardened and High Temperature EEPROMS -  - Northrop Grumman Corporation
Falls Church, VA, USA
Radiation Hardened and High Temperature EEPROMS
Northrop Grumman offers the only Radiation Hardened EEPROMs with the ability to re-write to memory. The radiation hardened robustness of the design (performed by Sandia National Laboratories) and fabrication process is flight proven with more than 10,000 radiation hardened EEPROM devices previously delivered to production systems. This product line offers the only solid-state reprogrammable nonvolatile memory available today that is inherently radiation hardened. No special shielding, specialized packages, redundant devices, or special power down is required to operate these devices in severe radiation environments. Users have the ability to re-write to memory more than 10,000 times with retention of 10 years. Our high temperature EEPROMs 256k CMOS High Temperature EEPROM with five years of retention at 220° C operation The W28C256 is a 32K x 8 bit nonvolatile EEPROM intended for use in high temperature environments where critical system data (Program Store, Start Up Read Only Memory, etc.) cannot be compromised during prolonged operation, or lost during power outages. 1MB CMOS High Temperature EEPROM with 1,200 hours of retention at 200° C operation The W28C0108 is a 128K x 8 bit nonvolatile EEPROM intended for use in high temperature environments where critical system data (Program Store, Start Up Read Only Memory, etc.) cannot be compromised during normal operation, or lost during power outages. Our radiation hardened EEPROMs 1MB Radiation Hardened CMOS EEPROM The W28C0108 radiation hardened nonvolatile 1Mbit (128K x 8) EEPROM is intended for use in space and harsh radiation environments where critical system data (Program Store, Start Up Read Only Memory, etc.) cannot be compromised during radiation exposure, or lost during power outages. 256k Radiation Hardened CMOS EEPROM The W28C256 is a 32K x 8 radiation hardened EEPROM designed by Sandia National Laboratories, Albuquerque, NM, and manufactured by the Northrop Grumman Advanced Technology Center, Baltimore, MD, using nonvolatile memory technology transferred from Sandia. It is built using a mature dual well CMOS process using N on N+ epitaxial silicon and a two layer interconnect system. Read the conference paper: A 256 kb (32kx8) EEPROM for >200 °C Applications. 64k Radiation Hardened CMOS EEPROM The W28C64 is a 8K x 8 radiation hardened EEPROM designed by Sandia National Laboratories, Albuquerque, NM, and manufactured by Northrop Grumman Advanced Technology Center, Baltimore, MD, using nonvolatile memory technology transferred from Sandia. It is built using a mature dual well CMOS process using N on N+ epitaxial silicon and a two layer interconnect system. Features include: 0.8 / 1.25 / 1.25 µm Rad Hardened CMOS on EPI Total Dose up to 300 kRads (Si) Memory Data Loss > 1E12 Rad(Si)/sec Single Event Upset in Address/Data Latches During Read LETth = 35 MeV/mg/cm² No Latchup JEDEC pin compatible in center 32p LCC Self Timed Programming Auto Program Start Asynchronous Addressing Address access time < 200 µsec Transient Logic Upset > 5E7 Rad(Si)/sec Single Event Upset During READ LETth = 60 MeV/mg/cm² Permanent SEU Damage (During Write Only) greater than or equal to Kr Compatible with Commercial EEPROMs Full military operating temperature range, screened to specific test methods for commercial, Class B, or modified Hi Rel Combined Erase/Write +3.3V / +5V / +5V only read operation 128 / 64 / 64 Word page Data Polling
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  Northrop Grumman Corporation
Product Category Memory Chips
Product Name Radiation Hardened and High Temperature EEPROMS
Memory Category EEPROM
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