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Northrop Grumman Corporation GaN Power Amplifiers

Description
Microelectronics Products & Services is now offering a line of Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) intended for military and challenging commercial wireless, high-power amplifier applications. GaN Power Amplifiers Products Part Description Frequency (GHz) Gain (dB) P1dB (dBm) Psat (dBm) Form Availability APN252 GaN Driver Amplifier 10-14 25.5 34 38 Die Limited Samples NEW APN250 GaN Power Amplifier 10-14 13 39 42 Die Limited Samples NEW APN226 GaN HEMT High Power Amplifier 13.5-15.5 20 36 39.5 Die Stock APN232 GaN Power Amplifier 13.5-15.5 13 38.5 42 Die Limited Samples NEW APN237 GaN Power Amplifier 13.5-15.5 13 40.5 44.5 Die Limited Samples NEW APN149 GaN HEMT High Power Amplifier 18-23 20 36 38 Die Limited Samples APN180 GaN HEMT High Power Amplifier 27-31 21 37 39 Die Pre-Production APN180FP Packaged GaN HEMT High Power Amplifier 27-31 20 37 39 Flange Package Limited Samples APN229 GaN HEMT High Power Amplifier 27-31 20 37 39 Die Pre-Production APN228 GaN HEMT High Power Amplifier 27-31 19.5 39 41.2 Die Limited Samples APN236 GaN Power Amplifier 34.5-35.5 16 38 40 Die Limited Samples NEW APN167 GaN HEMT High Power Amplifier 43-46 20 35.5 39 Die Limited Samples
Datasheet

Suppliers

Company
Product
Description
Supplier Links
GaN Power Amplifiers -  - Northrop Grumman Corporation
Falls Church, VA, USA
GaN Power Amplifiers
GaN Power Amplifiers
Microelectronics Products & Services is now offering a line of Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) intended for military and challenging commercial wireless, high-power amplifier applications. GaN Power Amplifiers Products Part Description Frequency (GHz) Gain (dB) P1dB (dBm) Psat (dBm) Form Availability APN252 GaN Driver Amplifier 10-14 25.5 34 38 Die Limited Samples NEW APN250 GaN Power Amplifier 10-14 13 39 42 Die Limited Samples NEW APN226 GaN HEMT High Power Amplifier 13.5-15.5 20 36 39.5 Die Stock APN232 GaN Power Amplifier 13.5-15.5 13 38.5 42 Die Limited Samples NEW APN237 GaN Power Amplifier 13.5-15.5 13 40.5 44.5 Die Limited Samples NEW APN149 GaN HEMT High Power Amplifier 18-23 20 36 38 Die Limited Samples APN180 GaN HEMT High Power Amplifier 27-31 21 37 39 Die Pre-Production APN180FP Packaged GaN HEMT High Power Amplifier 27-31 20 37 39 Flange Package Limited Samples APN229 GaN HEMT High Power Amplifier 27-31 20 37 39 Die Pre-Production APN228 GaN HEMT High Power Amplifier 27-31 19.5 39 41.2 Die Limited Samples APN236 GaN Power Amplifier 34.5-35.5 16 38 40 Die Limited Samples NEW APN167 GaN HEMT High Power Amplifier 43-46 20 35.5 39 Die Limited Samples

Microelectronics Products & Services is now offering a line of Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) intended for military and challenging commercial wireless, high-power amplifier applications.

GaN Power Amplifiers Products

Part

Description

Frequency (GHz)

Gain (dB)

P1dB (dBm)

Psat (dBm)

Form

Availability

APN252GaN Driver Amplifier10-1425.53438DieLimited Samples

NEW

APN250GaN Power Amplifier10-14133942DieLimited Samples

NEW

APN226GaN HEMT High Power Amplifier13.5-15.5203639.5DieStock
APN232GaN Power Amplifier13.5-15.51338.542DieLimited Samples

NEW

APN237GaN Power Amplifier13.5-15.51340.544.5DieLimited Samples

NEW

APN149GaN HEMT High Power Amplifier18-23203638DieLimited Samples
APN180GaN HEMT High Power Amplifier27-31213739DiePre-Production
APN180FPPackaged GaN HEMT High Power Amplifier27-31203739Flange PackageLimited Samples
APN229GaN HEMT High Power Amplifier27-31203739DiePre-Production
APN228GaN HEMT High Power Amplifier27-3119.53941.2DieLimited Samples
APN236GaN Power Amplifier34.5-35.5163840DieLimited Samples

NEW

APN167GaN HEMT High Power Amplifier43-462035.539DieLimited Samples
Supplier's Site Datasheet

Technical Specifications

  Northrop Grumman Corporation
Product Category RF Amplifiers
Product Name GaN Power Amplifiers
Amplifier Type Power Amplifier
Applications Military / Defense
Frequency Range 10000 to 46000 MHz
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