Nexperia B.V. 60 V, 600 mA, PNP switching transistor PXT2907A,115

Description
PNP switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface-Mounted Device (SMD) plastic package. NPN complement: PXT2222A Features and benefits High current: max. 600 mA Low voltage: max. 60 V AEC-Q101 qualified Applications Switching and linear amplification
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Description
PNP switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface-Mounted Device (SMD) plastic package. NPN complement: PXT2222A Features and benefits High current: max. 600 mA Low voltage: max. 60 V AEC-Q101 qualified Applications Switching and linear amplification
Request a Quote
Datasheet
Datasheet Summary
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PNP switching transistor in a medium power SOT89 (SC-62/TO-243) surface-mounted plastic package with a die pad for heat transfer. It has a maximum collector-emitter voltage of 60 V and a maximum collector current of 600 mA. The device is AEC-Q101 qualified and supports a maximum junction temperature of 150 °C. Power dissipation reaches 1.1 W with a 6 cm² collector pad, reducing thermal resistance to 113 K/W. DC current gain is at least 100 at -10 mA collector current. Collector-emitter saturation voltage is up to 1.6 V at -500 mA and -50 mA base current. Base-emitter saturation voltage is up to 2.6 V under the same conditions. Switching times include a delay of 12 ns and turn-off time of 365 ns. Collector and emitter capacitances are 8 pF and 35 pF at 1 MHz.

Datasheet Summary
Powered by GS/AI

PNP switching transistor in a medium power SOT89 (SC-62/TO-243) surface-mounted plastic package with a die pad for heat transfer. It has a maximum collector-emitter voltage of 60 V and a maximum collector current of 600 mA. The device is AEC-Q101 qualified and supports a maximum junction temperature of 150 °C. Power dissipation reaches 1.1 W with a 6 cm² collector pad, reducing thermal resistance to 113 K/W. DC current gain is at least 100 at -10 mA collector current. Collector-emitter saturation voltage is up to 1.6 V at -500 mA and -50 mA base current. Base-emitter saturation voltage is up to 2.6 V under the same conditions. Switching times include a delay of 12 ns and turn-off time of 365 ns. Collector and emitter capacitances are 8 pF and 35 pF at 1 MHz.

Suppliers

Company
Product
Description
Supplier Links
60 V, 600 mA, PNP switching transistor - PXT2907A,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 600 mA, PNP switching transistor
PXT2907A,115
60 V, 600 mA, PNP switching transistor PXT2907A,115
PNP switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface-Mounted Device (SMD) plastic package. NPN complement: PXT2222A Features and benefits High current: max. 600 mA Low voltage: max. 60 V AEC-Q101 qualified Applications Switching and linear amplification

PNP switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface-Mounted Device (SMD) plastic package.

NPN complement: PXT2222A

Features and benefits

  • High current: max. 600 mA
  • Low voltage: max. 60 V
  • AEC-Q101 qualified

Applications

  • Switching and linear amplification
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PXT2907A,115DKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PXT2907A,115DKR-ND
Single Bipolar Transistors 1727-PXT2907A,115DKR-ND
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 1.1W Surface Mount SOT-89

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 1.1W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PXT2907A,115TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PXT2907A,115TR-ND
Single Bipolar Transistors 1727-PXT2907A,115TR-ND
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 1.1W Surface Mount SOT-89

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 1.1W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PXT2907A,115CT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PXT2907A,115CT-ND
Single Bipolar Transistors 1727-PXT2907A,115CT-ND
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 1.1W Surface Mount SOT-89

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 1.1W Surface Mount SOT-89

Buy Now Datasheet
Bipolar Transistors - 7258574 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
7258574
Bipolar Transistors 7258574
Transistor PNP switching 0.6A 60V SOT89

Transistor PNP switching 0.6A 60V SOT89

Supplier's Site
 - PXT2907A,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
Singapore, Singapore
60 V 600 mA SOT-89 Bipolar Transistor
276-PXT2907A,115
60 V 600 mA SOT-89 Bipolar Transistor 276-PXT2907A,115
PXT2907A - 60 V, 600 mA, PNP switching transistor SOT-89 3-Pin Product overview: PXT2907A,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 600 mA, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 600 mA, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PXT2907A,115 can be used for catalog matching and distributor lookup.

PXT2907A - 60 V, 600 mA, PNP switching transistor SOT-89 3-Pin Product overview: PXT2907A,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 600 mA, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 600 mA, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PXT2907A,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - PXT2907A,115 - 1090845-PXT2907A,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PXT2907A,115
1090845-PXT2907A,115
TRANSISTORS - Transistors (BJT) - Single - PXT2907A,115 1090845-PXT2907A,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1090845-PXT2907A,115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 1.6V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 2V Maximum Power Dissipation: 1.1W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090845-PXT2907A,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max): 10nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 2V
Maximum Power Dissipation: 1.1W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single Bipolar Transistors - PXT2907A,115 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PXT2907A,115
Single Bipolar Transistors PXT2907A,115
TRANS PNP 60V 0.6A SOT89

TRANS PNP 60V 0.6A SOT89

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PXT2907A,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PXT2907A,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PXT2907A,115
TRANS PNP 60V 0.6A SOT89

TRANS PNP 60V 0.6A SOT89

Supplier's Site
Bipolar (Bjt) Single Transistor, Switching, Pnp, -60 V, 200 Mhz, 500 Mw, -600 Ma, 50 Rohs Compliant Nexperia - 93X4648 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Switching, Pnp, -60 V, 200 Mhz, 500 Mw, -600 Ma, 50 Rohs Compliant Nexperia
93X4648
Bipolar (Bjt) Single Transistor, Switching, Pnp, -60 V, 200 Mhz, 500 Mw, -600 Ma, 50 Rohs Compliant Nexperia 93X4648
Bipolar (BJT) Single Transistor, Switching, PNP, -60 V, 200 MHz, 500 mW, -600 mA, 50 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, Switching, PNP, -60 V, 200 MHz, 500 mW, -600 mA, 50 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey RS Components, Ltd. Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PXT2907A,115 1727-PXT2907A,115DKR-ND 7258574 PXT2907A,115 276-PXT2907A,115 1090845-PXT2907A,115 PXT2907A,115 PXT2907A,115 93X4648
Product Name 60 V, 600 mA, PNP switching transistor Single Bipolar Transistors Bipolar Transistors 60 V 600 mA SOT-89 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - PXT2907A,115 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar (Bjt) Single Transistor, Switching, Pnp, -60 V, 200 Mhz, 500 Mw, -600 Ma, 50 Rohs Compliant Nexperia
Package Type SOT89; SOT89 SOT89 SOT89; TO-243AA Sot-89 SOT89 SOT3; SOT89; SOT-89-3 SOT89; TO-243AA AEC-Q101 TO-3
Polarity PNP PNP PNP PNP; PNP PNP; PNP PNP
Transistor Grade / Operating Range Automotive
Number of units in IC 1
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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