NPN/NPN general-purpose double transistor in a TSSOP6 (SOT363-3) surface-mounted package measuring 2.2 mm × 1.35 mm, with a maximum collector-emitter voltage of 50 V, collector current of 150 mA, and total power dissipation of 300 mW per device. The device is qualified to AEC-Q101 for automotive applications and features a DC current gain (hFE) of 120 to 560 at 6 V and 1 mA. Junction temperature rating is 150 °C.
NPN/NPN general-purpose double transistors in a very small SOT363-3 (SC-88) Surface Mounted Device (SMD) plastic package.
Features and benefits
Applications
PUMX2-Q/SOT363/SC-88
PUMX2-Q/SOT363/SC-88
PUMX2-Q/SOT363/SC-88
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors |
| Product Number | PUMX2-QX | 1727-PUMX2-QXTR-ND |
| Product Name | NPN/NPN general-purpose double transistor | Bipolar Transistor Arrays |
| Package Type | SOT363-3 SOT363-3 | 6-TSSOP, SC-88, SOT-363 |
| IC(max) | 150 milliamps | |
| VCEO | 50 volts | |
| PD | 180 milliwatts |
