Nexperia B.V. 50 V, 100 mA NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open PUMH7F

Description
NPN/NPN resistor-equipped transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB3 NPN/NPN complement: PUMD6 Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs AEC-Q101 qualified Applications Low current peripheral driver Replacement of general purpose transistors in digital applications Control of IC inputs.
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Description
NPN/NPN resistor-equipped transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB3 NPN/NPN complement: PUMD6 Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs AEC-Q101 qualified Applications Low current peripheral driver Replacement of general purpose transistors in digital applications Control of IC inputs.
Request a Quote
Datasheet
Datasheet Summary
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NPN/NPN resistor-equipped transistors with built-in bias resistor R1 = 4.7 kΩ and R2 open, designed for simplified digital circuit design and reduced component count. Packaged in SOT363 (SC-88) surface-mount plastic package measuring 2.2 mm × 1.35 mm × 1.1 mm. Each transistor supports a collector-emitter voltage of 50 V and an output current of 100 mA, with total device power dissipation up to 300 mW. Operates within a junction temperature range of −65 °C to 150 °C. Complies with AEC-Q101 qualification standards.

Datasheet Summary
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NPN/NPN resistor-equipped transistors with built-in bias resistor R1 = 4.7 kΩ and R2 open, designed for simplified digital circuit design and reduced component count. Packaged in SOT363 (SC-88) surface-mount plastic package measuring 2.2 mm × 1.35 mm × 1.1 mm. Each transistor supports a collector-emitter voltage of 50 V and an output current of 100 mA, with total device power dissipation up to 300 mW. Operates within a junction temperature range of −65 °C to 150 °C. Complies with AEC-Q101 qualification standards.

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open - PUMH7F - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open
PUMH7F
50 V, 100 mA NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open PUMH7F
NPN/NPN resistor-equipped transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB3 NPN/NPN complement: PUMD6 Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs AEC-Q101 qualified Applications Low current peripheral driver Replacement of general purpose transistors in digital applications Control of IC inputs.

NPN/NPN resistor-equipped transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

PNP/PNP complement: PUMB3

NPN/NPN complement: PUMD6

Features and benefits

  • Built-in bias resistors
  • Simplified circuit design
  • Reduction of component count
  • Reduced pick and place costs
  • AEC-Q101 qualified

Applications

  • Low current peripheral driver
  • Replacement of general purpose transistors in digital applications
  • Control of IC inputs.
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - PUMH7F-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
PUMH7F-ND
Bipolar Transistor Arrays, Pre-Biased PUMH7F-ND
Pre-Biased Bipolar Transistor (BJT)

Pre-Biased Bipolar Transistor (BJT)

Buy Now Datasheet
Rf Transistor Rohs Compliant Nexperia - 29AK4250 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK4250
Rf Transistor Rohs Compliant Nexperia 29AK4250
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
PUMH7F
Bipolar Transistors - Pre-Biased PUMH7F
Bipolar Transistors - Pre-Biased PUMH7/SC-88/REEL 13" Q1/T1 *ST

Bipolar Transistors - Pre-Biased PUMH7/SC-88/REEL 13" Q1/T1 *ST

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PUMH7F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PUMH7F
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PUMH7F
TRANS PREBIAS SOT363/SC88

TRANS PREBIAS SOT363/SC88

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PUMH7F PUMH7F-ND 29AK4250 PUMH7F PUMH7F
Product Name 50 V, 100 mA NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open Bipolar Transistor Arrays, Pre-Biased Rf Transistor Rohs Compliant Nexperia Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT363-3 SOT363-3 6-TSSOP, SC-88, SOT-363 TO-3 6-TSSOP
Polarity NPN
Transistor Grade / Operating Range Automotive
Transistor Type Rf Transistor Rohs Compliant Nexperia
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