Nexperia B.V. 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PUMH10,115

Description
NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 PNP/PNP complement: PUMB10 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
Request a Quote Datasheet
Description
NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 PNP/PNP complement: PUMB10 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ - PUMH10,115 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PUMH10,115
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PUMH10,115
NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD10 PNP/PNP complement: PUMB10 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications

NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PUMD10

PNP/PNP complement: PUMB10

Features and benefits

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - PUMH10,115 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
PUMH10,115
Bipolar Transistor Arrays, Pre-Biased PUMH10,115
TRANS PREBIAS 2NPN 50V 6TSSOP

TRANS PREBIAS 2NPN 50V 6TSSOP

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMH10,115 - 1090721-PUMH10,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMH10,115
1090721-PUMH10,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMH10,115 1090721-PUMH10,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1090721-PUMH10,115 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: 6-TSSOP Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 100mV @ 250μA, 5mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 100 @ 10mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090721-PUMH10,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-TSSOP
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 100mV @ 250μA, 5mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 100 @ 10mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-5235-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-5235-1-ND
Bipolar Transistor Arrays, Pre-Biased 1727-5235-1-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-5235-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-5235-6-ND
Bipolar Transistor Arrays, Pre-Biased 1727-5235-6-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-5235-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-5235-2-ND
Bipolar Transistor Arrays, Pre-Biased 1727-5235-2-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Digital Transistor, 50V, 100Ma; Digital Transistor Polarity Nexperia - 92K8296 - Newark, An Avnet Company
Chicago, IL, United States
Digital Transistor, 50V, 100Ma; Digital Transistor Polarity Nexperia
92K8296
Digital Transistor, 50V, 100Ma; Digital Transistor Polarity Nexperia 92K8296
DIGITAL TRANSISTOR, 50V, 100MA; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; No. of Pins:6 Pin RoHS Compliant: Yes

DIGITAL TRANSISTOR, 50V, 100MA; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; No. of Pins:6 Pin RoHS Compliant: Yes

Supplier's Site Datasheet
Digital Transistor, 50V, 100Ma; Digital Transistor Polarity Nexperia - 93X6725 - Newark, An Avnet Company
Chicago, IL, United States
Digital Transistor, 50V, 100Ma; Digital Transistor Polarity Nexperia
93X6725
Digital Transistor, 50V, 100Ma; Digital Transistor Polarity Nexperia 93X6725
DIGITAL TRANSISTOR, 50V, 100MA; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; No. of Pins:6 Pin RoHS Compliant: Yes

DIGITAL TRANSISTOR, 50V, 100MA; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; No. of Pins:6 Pin RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Digital Transistors
PUMH10,115
Triode/MOS Tube/Transistor >> Digital Transistors PUMH10,115
100@10mA,5V 2 NPN - Pre-Biased 300mW 100mA 50V 1uA SOT-363 Digital Transistors ROHS

100@10mA,5V 2 NPN - Pre-Biased 300mW 100mA 50V 1uA SOT-363 Digital Transistors ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PUMH10,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PUMH10,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PUMH10,115
TRANS PREBIAS 2NPN 50V 6TSSOP

TRANS PREBIAS 2NPN 50V 6TSSOP

Supplier's Site

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Transistors Transistors Transistors Bipolar RF Transistors
Product Number PUMH10,115 PUMH10,115 1090721-PUMH10,115 1727-5235-1-ND 92K8296 PUMH10,115 PUMH10,115
Product Name 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMH10,115 Bipolar Transistor Arrays, Pre-Biased Digital Transistor, 50V, 100Ma; Digital Transistor Polarity Nexperia Triode/MOS Tube/Transistor >> Digital Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN 2 NPN - Pre-Biased (Dual); NPN NPN; 2 NPN - Pre-Biased (Dual) NPN NPN
Package Type SOT363 6-TSSOP, SC-88, SOT-363 SOT3; 6-TSSOP 6-TSSOP, SC-88, SOT-363 TO-3
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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