Nexperia B.V. 50 V, 100 mA NPN/PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open PUMD19,115

Description
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB19-Q NPN/NPN complement: PUMH19 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications
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Description
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB19-Q NPN/NPN complement: PUMH19 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications
Request a Quote
Datasheet
Datasheet Summary
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NPN/PNP resistor-equipped transistor with built-in bias resistor R1 = 22 kΩ and R2 open, for low current digital applications, in a SOT363 (SC-88) surface-mount package measuring 2.0 mm × 1.5 mm × 1.1 mm. Collector-emitter voltage rating is 50 V, maximum output current is 100 mA, total power dissipation is 300 mW per device, and junction temperature range is -65 °C to 150 °C. AEC-Q101 qualified.

Datasheet Summary
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NPN/PNP resistor-equipped transistor with built-in bias resistor R1 = 22 kΩ and R2 open, for low current digital applications, in a SOT363 (SC-88) surface-mount package measuring 2.0 mm × 1.5 mm × 1.1 mm. Collector-emitter voltage rating is 50 V, maximum output current is 100 mA, total power dissipation is 300 mW per device, and junction temperature range is -65 °C to 150 °C. AEC-Q101 qualified.

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA NPN/PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open - PUMD19,115 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN/PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open
PUMD19,115
50 V, 100 mA NPN/PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open PUMD19,115
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB19-Q NPN/NPN complement: PUMH19 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications

NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

PNP/PNP complement: PUMB19-Q

NPN/NPN complement: PUMH19

Features and benefits

  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • AEC-Q101 qualified

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replacement of general-purpose transistors in digital applications
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD19,115CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD19,115CT-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD19,115CT-ND
TRANS PREBIAS 1NPN 1PNP 6-TSSOP

TRANS PREBIAS 1NPN 1PNP 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD19,115DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD19,115DKR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD19,115DKR-ND
TRANS PREBIAS 1NPN 1PNP 6-TSSOP

TRANS PREBIAS 1NPN 1PNP 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD19,115TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD19,115TR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD19,115TR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
 - PUMD19,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PUMD19,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PUMD19,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PUMD19,115
TRANS PREBIAS 1NPN 1PNP 6TSSOP

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Supplier's Site
Rf Transistor Rohs Compliant Nexperia - 29AK4231 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK4231
Rf Transistor Rohs Compliant Nexperia 29AK4231
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors RF Transistors
Product Number PUMD19,115 1727-PUMD19,115CT-ND PUMD19,115 PUMD19,115 29AK4231
Product Name 50 V, 100 mA NPN/PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Rf Transistor Rohs Compliant Nexperia
Package Type SOT363-3 SOT363-3 6-TSSOP, SC-88, SOT-363 SOT363 6-TSSOP TO-3
Polarity NPN; PNP NPN; PNP
Transistor Grade / Operating Range Automotive
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR)
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