Nexperia B.V. 1200 V, 20 A SiC Schottky diode in D2PAK R2P for automotive applications PSC20120J-QJ

Description
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. Features and benefits Reduced system costs Temperature independent fast and smooth switching performance Outstanding figure of merit (Qc x VF) High IFSM capability High power density System miniaturization Reduced EMI Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Traction inverter DC-DC converter Onboard charger
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    Nexperia B.V.
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Description
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. Features and benefits Reduced system costs Temperature independent fast and smooth switching performance Outstanding figure of merit (Qc x VF) High IFSM capability High power density System miniaturization Reduced EMI Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Traction inverter DC-DC converter Onboard charger
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Suppliers

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1200 V, 20 A SiC Schottky diode in D2PAK R2P for automotive applications - PSC20120J-QJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
1200 V, 20 A SiC Schottky diode in D2PAK R2P for automotive applications
PSC20120J-QJ
1200 V, 20 A SiC Schottky diode in D2PAK R2P for automotive applications PSC20120J-QJ
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. Features and benefits Reduced system costs Temperature independent fast and smooth switching performance Outstanding figure of merit (Qc x VF) High IFSM capability High power density System miniaturization Reduced EMI Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Traction inverter DC-DC converter Onboard charger

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.

Features and benefits

  • Reduced system costs
  • Temperature independent fast and smooth switching performance
  • Outstanding figure of merit (Qc x VF)
  • High IFSM capability
  • High power density
  • System miniaturization
  • Reduced EMI
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Traction inverter
  • DC-DC converter
  • Onboard charger
Supplier's Site Datasheet
Single Diodes - 1727-PSC20120J-QJTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1727-PSC20120J-QJTR-ND
Single Diodes 1727-PSC20120J-QJTR-ND
PSC20120J-Q/SOT8018/ TO263-2L

PSC20120J-Q/SOT8018/TO263-2L

Buy Now Datasheet
Single Diodes - 1727-PSC20120J-QJCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1727-PSC20120J-QJCT-ND
Single Diodes 1727-PSC20120J-QJCT-ND
PSC20120J-Q/SOT8018/ TO263-2L

PSC20120J-Q/SOT8018/TO263-2L

Buy Now Datasheet
Single Diodes - 1727-PSC20120J-QJDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1727-PSC20120J-QJDKR-ND
Single Diodes 1727-PSC20120J-QJDKR-ND
PSC20120J-Q/SOT8018/ TO263-2L

PSC20120J-Q/SOT8018/TO263-2L

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Schottky Diodes Diodes
Product Number PSC20120J-QJ 1727-PSC20120J-QJTR-ND
Product Name 1200 V, 20 A SiC Schottky diode in D2PAK R2P for automotive applications Single Diodes
Package SOT8018 SOT8018
RoHS Compliant RoHS
VF 1.8 to 0.0018 volts
IF 20 mA
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