Nexperia B.V. 650 V, 10 A SiC Schottky diode in DPAK R2P PSC1065HJ

Description
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. Features and benefits Zero forward and reverse recovery Temperature independent fast and smooth switching performance Outstanding figure-of-merit (Qc x VF) High IFSM capability High power density Reduced system cost System miniaturization Reduced EMI Applications Switch Mode Power Supply (SMPS) AC-DC and DC-DC converter Battery charging infrastructure Server and telecom power supply Uninterruptible Power Supply (UPS) Photovoltaic inverters
  • 650 V, 10 A SiC Schottky diode in DPAK R2P - PSC1065HJ - Nexperia B.V.
    Nexperia B.V.
  • Single Diodes - 1727-PSC1065HJCT-ND - DigiKey
    DigiKey
  • Single Diodes - 1727-PSC1065HJTR-ND - DigiKey
    DigiKey
  • Single Diodes - 1727-PSC1065HJDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. Features and benefits Zero forward and reverse recovery Temperature independent fast and smooth switching performance Outstanding figure-of-merit (Qc x VF) High IFSM capability High power density Reduced system cost System miniaturization Reduced EMI Applications Switch Mode Power Supply (SMPS) AC-DC and DC-DC converter Battery charging infrastructure Server and telecom power supply Uninterruptible Power Supply (UPS) Photovoltaic inverters
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Suppliers

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Supplier Links
650 V, 10 A SiC Schottky diode in DPAK R2P - PSC1065HJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
650 V, 10 A SiC Schottky diode in DPAK R2P
PSC1065HJ
650 V, 10 A SiC Schottky diode in DPAK R2P PSC1065HJ
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. Features and benefits Zero forward and reverse recovery Temperature independent fast and smooth switching performance Outstanding figure-of-merit (Qc x VF) High IFSM capability High power density Reduced system cost System miniaturization Reduced EMI Applications Switch Mode Power Supply (SMPS) AC-DC and DC-DC converter Battery charging infrastructure Server and telecom power supply Uninterruptible Power Supply (UPS) Photovoltaic inverters

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.

Features and benefits

  • Zero forward and reverse recovery
  • Temperature independent fast and smooth switching performance
  • Outstanding figure-of-merit (Qc x VF)
  • High IFSM capability
  • High power density
  • Reduced system cost
  • System miniaturization
  • Reduced EMI

Applications

  • Switch Mode Power Supply (SMPS)
  • AC-DC and DC-DC converter
  • Battery charging infrastructure
  • Server and telecom power supply
  • Uninterruptible Power Supply (UPS)
  • Photovoltaic inverters
Supplier's Site Datasheet
Single Diodes - 1727-PSC1065HJCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1727-PSC1065HJCT-ND
Single Diodes 1727-PSC1065HJCT-ND
DIODE SIL CARB 650V 10A TO252

DIODE SIL CARB 650V 10A TO252

Buy Now Datasheet
Single Diodes - 1727-PSC1065HJTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1727-PSC1065HJTR-ND
Single Diodes 1727-PSC1065HJTR-ND
DIODE SIL CARB 650V 10A TO252-2

DIODE SIL CARB 650V 10A TO252-2

Buy Now Datasheet
Single Diodes - 1727-PSC1065HJDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1727-PSC1065HJDKR-ND
Single Diodes 1727-PSC1065HJDKR-ND
DIODE SIL CARB 650V 10A TO2522

DIODE SIL CARB 650V 10A TO2522

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Schottky Diodes Diodes
Product Number PSC1065HJ 1727-PSC1065HJCT-ND
Product Name 650 V, 10 A SiC Schottky diode in DPAK R2P Single Diodes
Applications Switching
Package SOT8017 SOT8017
RoHS Compliant RoHS
VF 1.8 to 0.0018 volts
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