Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Features and benefits
Applications
DIODE SIL CARB 650V 10A TO252
DIODE SIL CARB 650V 10A TO252-2
DIODE SIL CARB 650V 10A TO2522
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Schottky Diodes | Diodes |
| Product Number | PSC1065HJ | 1727-PSC1065HJCT-ND |
| Product Name | 650 V, 10 A SiC Schottky diode in DPAK R2P | Single Diodes |
| Applications | Switching | |
| Package | SOT8017 SOT8017 | |
| RoHS Compliant | RoHS | |
| VF | 1.8 to 0.0018 volts |