Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Features and benefits
Zero forward and reverse recovery
Temperature independent fast and smooth switching performance
Outstanding figure of merit (Qc x VF)
High IFSM capability
High power density
Reduced system costs
System miniaturization
Reduced EMI
Applications
Switch Mode Power Supply (SMPS)
AC-DC and DC-DC converter
Battery charging infrastructure
Server and telecom power supply
Uninterruptible Power Supply (UPS)
Photovoltaic inverters
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Features and benefits
- Zero forward and reverse recovery
- Temperature independent fast and smooth switching performance
- Outstanding figure of merit (Qc x VF)
- High IFSM capability
- High power density
- Reduced system costs
- System miniaturization
- Reduced EMI
Applications
- Switch Mode Power Supply (SMPS)
- AC-DC and DC-DC converter
- Battery charging infrastructure
- Server and telecom power supply
- Uninterruptible Power Supply (UPS)
- Photovoltaic inverters
