P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package measuring 2 x 2 x 0.65 mm, using Trench MOSFET technology. It has a drain-source voltage rating of -20 V, continuous drain current of -3.2 A at 25 °C, and on-state resistance of 100 to 122 mΩ at -4.5 V gate-source voltage. The device supports a maximum junction temperature of 175 °C, provides ESD protection exceeding 2 kV HBM, and is AEC-Q101 qualified.
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB100XPEAZ |
| Product Name | 20 V, P-channel Trench MOSFET |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | -20 volts |
| IDSS | -3200 milliamps |
| VGS(off) | 8 volts |
