P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Extended temperature range Tj = 175 °C
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Tin-plated 100% solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Trench MOSFET technology
AEC-Q101 qualified
Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
- Extended temperature range Tj = 175 °C
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Tin-plated 100% solderable side pads for optical solder inspection
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Trench MOSFET technology
- AEC-Q101 qualified
Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
