Nexperia B.V. Extremely low capacitance bidirectional ESD protection diode PESD5V5C1BBSFYL

Description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. Features and benefits Bidirectional ESD protection of one line VRWM = 5.5 V device IEC 61000-4-5 (surge): IPP = 10 A peak pulse (average measured) IEC 61000-4-4 robust up to 56 A into a 50 Ohm termination (2.8 kV) Extremely low diode capacitance Cd = 0.26 pF typical Very high pass-band: 23.6 GHz in a 50 Ohm system Extremely low clamping voltage to protect sensitive I/Os Very low peak clamping for sensitive IC with low-inductance traces between protection and protected system Extremely low-inductance protection path to ground ESD protection up to ±15 kV according to IEC 61000-4-2 Very low trigger voltage Vt1 = 7.9 V to protect against low-voltage surge pulses Ultra-small SMD package Applications Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals USB3.2 and HDMI2.0 data lines
Request a Quote Datasheet
Description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. Features and benefits Bidirectional ESD protection of one line VRWM = 5.5 V device IEC 61000-4-5 (surge): IPP = 10 A peak pulse (average measured) IEC 61000-4-4 robust up to 56 A into a 50 Ohm termination (2.8 kV) Extremely low diode capacitance Cd = 0.26 pF typical Very high pass-band: 23.6 GHz in a 50 Ohm system Extremely low clamping voltage to protect sensitive I/Os Very low peak clamping for sensitive IC with low-inductance traces between protection and protected system Extremely low-inductance protection path to ground ESD protection up to ±15 kV according to IEC 61000-4-2 Very low trigger voltage Vt1 = 7.9 V to protect against low-voltage surge pulses Ultra-small SMD package Applications Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals USB3.2 and HDMI2.0 data lines
Request a Quote Datasheet

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Extremely low capacitance bidirectional ESD protection diode - PESD5V5C1BBSFYL - Nexperia B.V.
Nijmegen, Netherlands
Extremely low capacitance bidirectional ESD protection diode
PESD5V5C1BBSFYL
Extremely low capacitance bidirectional ESD protection diode PESD5V5C1BBSFYL
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. Features and benefits Bidirectional ESD protection of one line VRWM = 5.5 V device IEC 61000-4-5 (surge): IPP = 10 A peak pulse (average measured) IEC 61000-4-4 robust up to 56 A into a 50 Ohm termination (2.8 kV) Extremely low diode capacitance Cd = 0.26 pF typical Very high pass-band: 23.6 GHz in a 50 Ohm system Extremely low clamping voltage to protect sensitive I/Os Very low peak clamping for sensitive IC with low-inductance traces between protection and protected system Extremely low-inductance protection path to ground ESD protection up to ±15 kV according to IEC 61000-4-2 Very low trigger voltage Vt1 = 7.9 V to protect against low-voltage surge pulses Ultra-small SMD package Applications Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals USB3.2 and HDMI2.0 data lines

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients.

Features and benefits

  • Bidirectional ESD protection of one line
  • VRWM = 5.5 V device
  • IEC 61000-4-5 (surge): IPP = 10 A peak pulse (average measured)
  • IEC 61000-4-4 robust up to 56 A into a 50 Ohm termination (2.8 kV)
  • Extremely low diode capacitance Cd = 0.26 pF typical
  • Very high pass-band: 23.6 GHz in a 50 Ohm system
  • Extremely low clamping voltage to protect sensitive I/Os
  • Very low peak clamping for sensitive IC with low-inductance traces between protection and protected system
  • Extremely low-inductance protection path to ground
  • ESD protection up to ±15 kV according to IEC 61000-4-2
  • Very low trigger voltage Vt1 = 7.9 V to protect against low-voltage surge pulses
  • Ultra-small SMD package

Applications

  • Cellular handsets and accessories
  • Portable electronics
  • Communication systems
  • Computers and peripherals
  • USB3.2 and HDMI2.0 data lines
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Diodes
Product Number PESD5V5C1BBSFYL
Product Name Extremely low capacitance bidirectional ESD protection diode
Diode Applications Protector
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