PNP low VCEsat (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package measuring 1.0 x 0.6 x 0.37 mm, rated for a collector-emitter voltage of -40 V and a continuous collector current of -500 mA, with a peak collector current capability of -1 A and a collector-emitter saturation resistance of 440 to 700 mΩ under specified conditions; AEC-Q101 qualified.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB.
Features and benefits
Applications
Trans GP BJT PNP 40V 0.5A 590mW Automotive 3-Pin DFN-B T/R Product overview: PBSS3540MB,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 40V, 0.5A, 590mW, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 40V, 0.5A, 590mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS3540MB,315 can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 40V 500mA 300MHz 250mW Surface Mount DFN1006B-3
Bipolar (BJT) Transistor PNP 40V 500mA 300MHz 250mW Surface Mount DFN1006B-3
Bipolar (BJT) Transistor PNP 40V 500mA 300MHz 250mW Surface Mount DFN1006B-3
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086434-PBSS3540MB,3
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-DFN1006B (0.6x1)
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 50mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 10mA, 2V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PBSS3540MB,315 | 276-PBSS3540MB,315 | 1727-1299-1-ND | 1086434-PBSS3540MB,315 | 29AK2892 |
| Product Name | 40 V, 0.5 A PNP low VCEsat (BISS) transistor | Automotive 40V 0.5A 590mW Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - PBSS3540MB,315 | Transistor, Bipolar Rohs Compliant Nexperia |
| Package Type | SOT883B SOT883B | 3-XFDFN | SOT3; 3-DFN1006B (0.6x1) | TO-3 | |
| IC(max) | 500 milliamps | ||||
| VCBO | 40 volts | ||||
| PD | 590 milliwatts |
