Nexperia B.V. 1200 V, 80 mOhm, N-channel SiC MOSFET NSF080120T2A1J

Description
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives
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Description
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives
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1200 V, 80 mOhm, N-channel SiC MOSFET - NSF080120T2A1J - Nexperia B.V.
Nijmegen, Netherlands
1200 V, 80 mOhm, N-channel SiC MOSFET
NSF080120T2A1J
1200 V, 80 mOhm, N-channel SiC MOSFET NSF080120T2A1J
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives

The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

Features and benefits

  • Excellent RDSon temperature stability
  • Very low switching losses
  • Fast reverse recovery
  • Fast switching speed
  • Temperature independent turn-off switching losses
  • Very fast and robust intrinsic body diode
  • Faster commutation and improved switching due to the additional Kelvin source pin

Applications

  • E-vehicle charging infrastructure
  • Photovoltaic inverters
  • Switch mode power supply
  • Uninterruptable power supply
  • Motor drives
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number NSF080120T2A1J
Product Name 1200 V, 80 mOhm, N-channel SiC MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
IDSS 31000 milliamps
VGS(off) 22 volts
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