Nexperia B.V. 1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications NSF080120T2A1-QJ

Description
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage automotive applications, such as E-vehicle onboard charger DC-DC converter and auxiliary drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Qualified for automotive applications, based on AEC-Q101 Applications Onboard charger DC-DC converter Auxiliary drives
  • 1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications - NSF080120T2A1-QJ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-NSF080120T2A1-QJCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-NSF080120T2A1-QJTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-NSF080120T2A1-QJDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage automotive applications, such as E-vehicle onboard charger DC-DC converter and auxiliary drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Qualified for automotive applications, based on AEC-Q101 Applications Onboard charger DC-DC converter Auxiliary drives
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications - NSF080120T2A1-QJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications
NSF080120T2A1-QJ
1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications NSF080120T2A1-QJ
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage automotive applications, such as E-vehicle onboard charger DC-DC converter and auxiliary drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Qualified for automotive applications, based on AEC-Q101 Applications Onboard charger DC-DC converter Auxiliary drives

The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage automotive applications, such as E-vehicle onboard charger DC-DC converter and auxiliary drives.

Features and benefits

  • Excellent RDSon temperature stability
  • Very low switching losses
  • Fast reverse recovery
  • Fast switching speed
  • Temperature independent turn-off switching losses
  • Very fast and robust intrinsic body diode
  • Faster commutation and improved switching due to the additional Kelvin source pin
  • Qualified for automotive applications, based on AEC-Q101

Applications

  • Onboard charger
  • DC-DC converter
  • Auxiliary drives
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-NSF080120T2A1-QJCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NSF080120T2A1-QJCT-ND
Single FETs, MOSFETs 1727-NSF080120T2A1-QJCT-ND
1200 V, 80 M, X.PAK, N-CHANNEL S

1200 V, 80 M, X.PAK, N-CHANNEL S

Buy Now Datasheet
Single FETs, MOSFETs - 1727-NSF080120T2A1-QJTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NSF080120T2A1-QJTR-ND
Single FETs, MOSFETs 1727-NSF080120T2A1-QJTR-ND
1200 V, 80 M, X.PAK, N-CHANNEL S

1200 V, 80 M, X.PAK, N-CHANNEL S

Buy Now Datasheet
Single FETs, MOSFETs - 1727-NSF080120T2A1-QJDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NSF080120T2A1-QJDKR-ND
Single FETs, MOSFETs 1727-NSF080120T2A1-QJDKR-ND
1200 V, 80 M, X.PAK, N-CHANNEL S

1200 V, 80 M, X.PAK, N-CHANNEL S

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number NSF080120T2A1-QJ 1727-NSF080120T2A1-QJCT-ND
Product Name 1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
IDSS 31000 milliamps
VGS(off) 22 volts
Unlock Full Specs
to access all available technical data