Nexperia B.V. 1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications NSF080120T2A1-QJ

Description
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage automotive applications, such as E-vehicle onboard charger DC-DC converter and auxiliary drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Qualified for automotive applications, based on AEC-Q101 Applications Onboard charger DC-DC converter Auxiliary drives
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Description
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage automotive applications, such as E-vehicle onboard charger DC-DC converter and auxiliary drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Qualified for automotive applications, based on AEC-Q101 Applications Onboard charger DC-DC converter Auxiliary drives
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1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications - NSF080120T2A1-QJ - Nexperia B.V.
Nijmegen, Netherlands
1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications
NSF080120T2A1-QJ
1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications NSF080120T2A1-QJ
The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage automotive applications, such as E-vehicle onboard charger DC-DC converter and auxiliary drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Qualified for automotive applications, based on AEC-Q101 Applications Onboard charger DC-DC converter Auxiliary drives

The NSF080120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage automotive applications, such as E-vehicle onboard charger DC-DC converter and auxiliary drives.

Features and benefits

  • Excellent RDSon temperature stability
  • Very low switching losses
  • Fast reverse recovery
  • Fast switching speed
  • Temperature independent turn-off switching losses
  • Very fast and robust intrinsic body diode
  • Faster commutation and improved switching due to the additional Kelvin source pin
  • Qualified for automotive applications, based on AEC-Q101

Applications

  • Onboard charger
  • DC-DC converter
  • Auxiliary drives
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number NSF080120T2A1-QJ
Product Name 1200 V, 80 mOhm, N-channel SiC MOSFET for automotive applications
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
IDSS 31000 milliamps
VGS(off) 22 volts
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