Nexperia B.V. 1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications NSF040120L4A1-QQ

Description
The NSF040120L4A1-Q is a Silicon Carbide based 1200V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage automotive applications like E-vehicle onboard charger, DC-DC converter and auxiliary drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Qualified for automotive applications, based on AEC-Q101 Applications Onboard charger DC-DC converter Auxiliary drives
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Description
The NSF040120L4A1-Q is a Silicon Carbide based 1200V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage automotive applications like E-vehicle onboard charger, DC-DC converter and auxiliary drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Qualified for automotive applications, based on AEC-Q101 Applications Onboard charger DC-DC converter Auxiliary drives
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1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications - NSF040120L4A1-QQ - Nexperia B.V.
Nijmegen, Netherlands
1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications
NSF040120L4A1-QQ
1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications NSF040120L4A1-QQ
The NSF040120L4A1-Q is a Silicon Carbide based 1200V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage automotive applications like E-vehicle onboard charger, DC-DC converter and auxiliary drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Qualified for automotive applications, based on AEC-Q101 Applications Onboard charger DC-DC converter Auxiliary drives

The NSF040120L4A1-Q is a Silicon Carbide based 1200V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage automotive applications like E-vehicle onboard charger, DC-DC converter and auxiliary drives.

Features and benefits

  • Excellent RDSon temperature stability
  • Very low switching losses
  • Fast reverse recovery
  • Fast switching speed
  • Temperature independent turn-off switching losses
  • Very fast and robust intrinsic body diode
  • Faster commutation and improved switching due to the additional Kelvin source pin
  • Qualified for automotive applications, based on AEC-Q101

Applications

  • Onboard charger
  • DC-DC converter
  • Auxiliary drives
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number NSF040120L4A1-QQ
Product Name 1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
IDSS 53000 milliamps
VGS(off) 22 volts
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