The NSF017120T2A0-Q is a 1200 V, 17 mΩ N-channel silicon carbide MOSFET in a 7-pin X.PAK plastic package measuring 14.0 mm × 11.8 mm × 3.5 mm, designed for surface-mounted, topside-cooled automotive applications. It features excellent RDSon temperature stability, very low switching losses, fast reverse recovery, and a robust intrinsic body diode, enabled by a Kelvin source pin for improved switching performance. The device operates with a junction temperature range of -55 °C to 175 °C, has a thermal resistance from junction to case of 0.23-0.29 K/W, and is qualified to AEC-Q101 for automotive use. Maximum continuous drain current is 122 A at 25 °C and 86 A at 100 °C, with peak pulsed drain current of 284 A. Recommended gate-source voltages are 15-18 V for turn-on and -5-0 V for turn-off.
The NSF017120T2A0-Q is a Silicon Carbide based 1200V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage automotive applications, such as onboard chargers, DC-DC converters, and auxiliary drives.
Features and benefits
Applications
1200 V, 17 M, X.PAK, N-CHANNEL S
1200 V, 17 M, X.PAK, N-CHANNEL S
1200 V, 17 M, X.PAK, N-CHANNEL S
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | NSF017120T2A0-QJ | 1727-NSF017120T2A0-QJCT-ND |
| Product Name | 1200 V, 17 mΩ, N-channel SiC MOSFET for automotive applications | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 1200 volts | |
| IDSS | 122000 milliamps | |
| VGS(off) | 22 volts |
