Nexperia B.V. 4 A peak high-performance dual MOSFET gate driver NGD4300GCJ

Description
The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage. Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads. The NGD4300 is offered in the SO8, HWSON8 and HSO8 packages, and operates over an extended −40 °C to +125 °C temperature range. Features and benefits Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V Output signals with excellent propagation delay matching of 1 ns typical Fast propagation times of 13 ns typical Switching frequency up to 1 MHz 4 A peak source and 5 A sink current capability of the gate driver output stage 4 ns rise and 3.5 ns fall times with 1000 pF loads Bootstrap supply voltage up to 120 V using an integrated bootstrap diode 8 V to 17 V VDD operation range Undervoltage protection for both low-side and high-side supplies Low-power consumption (IDDO = 0.6 mA typical) 8 pin SO8, HWSON8 and HSO8 packages ESD protection: HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V Specified from -40 °C to +125 °C Applications Current-fed, push-pull converters Two-switch forward power converters Class-D audio amplifiers Solid-state motor drives
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Description
The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage. Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads. The NGD4300 is offered in the SO8, HWSON8 and HSO8 packages, and operates over an extended −40 °C to +125 °C temperature range. Features and benefits Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V Output signals with excellent propagation delay matching of 1 ns typical Fast propagation times of 13 ns typical Switching frequency up to 1 MHz 4 A peak source and 5 A sink current capability of the gate driver output stage 4 ns rise and 3.5 ns fall times with 1000 pF loads Bootstrap supply voltage up to 120 V using an integrated bootstrap diode 8 V to 17 V VDD operation range Undervoltage protection for both low-side and high-side supplies Low-power consumption (IDDO = 0.6 mA typical) 8 pin SO8, HWSON8 and HSO8 packages ESD protection: HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V Specified from -40 °C to +125 °C Applications Current-fed, push-pull converters Two-switch forward power converters Class-D audio amplifiers Solid-state motor drives
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Suppliers

Company
Product
Description
Supplier Links
4 A peak high-performance dual MOSFET gate driver - NGD4300GCJ - Nexperia B.V.
Nijmegen, Netherlands
4 A peak high-performance dual MOSFET gate driver
NGD4300GCJ
4 A peak high-performance dual MOSFET gate driver NGD4300GCJ
The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage. Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads. The NGD4300 is offered in the SO8, HWSON8 and HSO8 packages, and operates over an extended −40 °C to +125 °C temperature range. Features and benefits Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V Output signals with excellent propagation delay matching of 1 ns typical Fast propagation times of 13 ns typical Switching frequency up to 1 MHz 4 A peak source and 5 A sink current capability of the gate driver output stage 4 ns rise and 3.5 ns fall times with 1000 pF loads Bootstrap supply voltage up to 120 V using an integrated bootstrap diode 8 V to 17 V VDD operation range Undervoltage protection for both low-side and high-side supplies Low-power consumption (IDDO = 0.6 mA typical) 8 pin SO8, HWSON8 and HSO8 packages ESD protection: HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V Specified from -40 °C to +125 °C Applications Current-fed, push-pull converters Two-switch forward power converters Class-D audio amplifiers Solid-state motor drives

The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.

Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads.

The NGD4300 is offered in the SO8, HWSON8 and HSO8 packages, and operates over an extended −40 °C to +125 °C temperature range.


Features and benefits

  • Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V
  • Output signals with excellent propagation delay matching of 1 ns typical
  • Fast propagation times of 13 ns typical
  • Switching frequency up to 1 MHz
  • 4 A peak source and 5 A sink current capability of the gate driver output stage
  • 4 ns rise and 3.5 ns fall times with 1000 pF loads
  • Bootstrap supply voltage up to 120 V using an integrated bootstrap diode
  • 8 V to 17 V VDD operation range
  • Undervoltage protection for both low-side and high-side supplies
  • Low-power consumption (IDDO = 0.6 mA typical)
  • 8 pin SO8, HWSON8 and HSO8 packages
  • ESD protection:
    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
  • Specified from -40 °C to +125 °C

Applications

  • Current-fed, push-pull converters
  • Two-switch forward power converters
  • Class-D audio amplifiers
  • Solid-state motor drives
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Logic Gates
Product Number NGD4300GCJ
Product Name 4 A peak high-performance dual MOSFET gate driver
Operating Temperature 125 C (257 F)
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