PNP Darlington transistor in a small SOT23 surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm, with a pin pitch of 1.9 mm. Maximum collector current is -500 mA and peak collector current is -800 mA. Collector-emitter voltage is -30 V, collector-base voltage is -40 V, and emitter-base voltage is -10 V. Total power dissipation is 250 mW at ambient temperatures up to 25 °C. Junction temperature rating is 150 °C. Thermal resistance from junction to ambient is 500 K/W. DC current gain exceeds 20,000 at -5 V collector-emitter voltage and -100 mA collector current. Qualified according to AEC-Q101 and recommended for automotive applications. NPN complement is BCV47-Q.
PNP Darlington transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.
NPN complement: BCV47-Q
Features and benefits
Applications
BCV26-Q/SOT23/TO-236
BCV26-Q/SOT23/TO-236
BCV26-Q/SOT23/TO-236
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Darlington Transistors | Transistors |
| Product Number | BCV26-QVL | 1727-BCV26-QVLCT-ND |
| Product Name | PNP Darlington transistor | Single Bipolar Transistors |
| IC(max) | -500 milliamps | |
| PD | 250 milliwatts | |
| TJ | 150 C (302 F) |
