PNP general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks, measuring 1.1 mm x 1.0 mm x 0.48 mm and with a height of 0.48 mm. It has a collector-emitter voltage rating of -65 V, a collector current rating of -100 mA, and a peak collector current of -200 mA. Total power dissipation is up to 340 mW on a standard FR4 PCB with 35 µm copper, and 420 mW on a PCB with 70 µm copper. The junction temperature ranges from -55 °C to 150 °C. It is qualified to AEC-Q101 for automotive applications and suitable for automatic optical inspection of solder joints.
PNP general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
Table 1.Product overview
Type number
-
Package
-
NPN complement:
Nexperia
-
JEDEC
BC856AQB-Q
SOT8015
MO-340BA
BC846AQB-Q
BC856BQB-Q
BC846BQB-Q
Features and benefits
Applications
TRANS PNP 65V 0.1A DFN1110D-3
TRANS PNP 65V 0.1A DFN1110D-3
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors |
| Product Number | BC856AQB-QZ | 1727-BC856AQB-QZTR-ND |
| Product Name | 65 V, 100 mA PNP general-purpose transistors | Single Bipolar Transistors |
| Package Type | SOT8015 SOT8015 | 3-XDFN Exposed Pad |
| IC(max) | -100 milliamps | |
| VCEO | -65 volts | |
| PD | 340 milliwatts |
