Nexperia B.V. 45 V, 100 mA NPN/PNP general-purpose double transistors BC847RAPNZ

Description
NPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847RA PNP/PNP complement: BC857RA Features and benefits Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified Applications General-purpose switching and amplification Mobile applications
Request a Quote Datasheet
Description
NPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847RA PNP/PNP complement: BC857RA Features and benefits Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified Applications General-purpose switching and amplification Mobile applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
45 V, 100 mA NPN/PNP general-purpose double transistors - BC847RAPNZ - Nexperia B.V.
Nijmegen, Netherlands
45 V, 100 mA NPN/PNP general-purpose double transistors
BC847RAPNZ
45 V, 100 mA NPN/PNP general-purpose double transistors BC847RAPNZ
NPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847RA PNP/PNP complement: BC857RA Features and benefits Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified Applications General-purpose switching and amplification Mobile applications

NPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: BC847RA

PNP/PNP complement: BC857RA

Features and benefits

  • Reduces component count
  • Reduces pick and place costs
  • Low package height of 0.5 mm
  • AEC-Q101 qualified

Applications

  • General-purpose switching and amplification
  • Mobile applications
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-7386-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-7386-2-ND
Bipolar Transistor Arrays 1727-7386-2-ND
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-7386-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-7386-6-ND
Bipolar Transistor Arrays 1727-7386-6-ND
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-7386-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-7386-1-ND
Bipolar Transistor Arrays 1727-7386-1-ND
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6

Buy Now Datasheet
Bipolar Transistor Arrays - BC847RAPNZ - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
BC847RAPNZ
Bipolar Transistor Arrays BC847RAPNZ
TRAN NPN/PNP 45V 0.1A DFN1412-6

TRAN NPN/PNP 45V 0.1A DFN1412-6

Supplier's Site Datasheet
Transistor Array, Aec-Q101, 45V, Dfn1412; Transistor Polarity Nexperia - 37AC0524 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Aec-Q101, 45V, Dfn1412; Transistor Polarity Nexperia
37AC0524
Transistor Array, Aec-Q101, 45V, Dfn1412; Transistor Polarity Nexperia 37AC0524
TRANSISTOR ARRAY, AEC-Q101, 45V, DFN1412; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:480mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:DFN1412; No. ofRoHS Compliant: Yes

TRANSISTOR ARRAY, AEC-Q101, 45V, DFN1412; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:480mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:DFN1412; No. ofRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC847RAPNZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC847RAPNZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC847RAPNZ
TRAN NPN/PNP 45V 0.1A DFN1412-6

TRAN NPN/PNP 45V 0.1A DFN1412-6

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BC847RAPNZ 1727-7386-2-ND BC847RAPNZ 37AC0524 BC847RAPNZ
Product Name 45 V, 100 mA NPN/PNP general-purpose double transistors Bipolar Transistor Arrays Bipolar Transistor Arrays Transistor Array, Aec-Q101, 45V, Dfn1412; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT1268 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad TO-3 AEC-Q100
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 45 volts 45 volts 45 volts
PD 325 milliwatts
Operating Frequency 100 MHz 100 MHz
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