Nexperia B.V. 45 V, 200 mA NPN/NPN general-purpose transistor BC847QASZ

Description
NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS NPN/PNP complement: BC847QAPN Features and benefits Reduces component count Reduces pick and place costs Low package height of 0.37 mm Applications General-purpose switching and amplification Mobile applications
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Suppliers

Company
Product
Description
Supplier Links
45 V, 200 mA NPN/NPN general-purpose transistor - BC847QASZ - Nexperia B.V.
Nijmegen, Netherlands
45 V, 200 mA NPN/NPN general-purpose transistor
BC847QASZ
45 V, 200 mA NPN/NPN general-purpose transistor BC847QASZ
NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS NPN/PNP complement: BC847QAPN Features and benefits Reduces component count Reduces pick and place costs Low package height of 0.37 mm Applications General-purpose switching and amplification Mobile applications

NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.

PNP/PNP complement: BC857QAS

NPN/PNP complement: BC847QAPN

Features and benefits

  • Reduces component count
  • Reduces pick and place costs
  • Low package height of 0.37 mm

Applications

  • General-purpose switching and amplification
  • Mobile applications
Supplier's Site Datasheet
 - BC847QASZ - Rochester Electronics
Newburyport, MA, United States
BC847QAS - 45 V, 200 mA NPN/NPN general-purpose transistor

BC847QAS - 45 V, 200 mA NPN/NPN general-purpose transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC847QASZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC847QASZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC847QASZ
TRANS 2NPN 45V 0.1A DFN1010B-6

TRANS 2NPN 45V 0.1A DFN1010B-6

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC847QASZ
Bipolar Transistors - BJT BC847QASZ
Bipolar Transistors - BJT 45V 100 mA NPN/NPN general-purpose

Bipolar Transistors - BJT 45V 100 mA NPN/NPN general-purpose

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 1325638-BC847QASZ - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
1325638-BC847QASZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 1325638-BC847QASZ
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1325638-BC847QASZ Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Packaging: Reel - TR Standard Package: 5,000 Mounting: Surface Mount Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 45V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 NPN (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1010B-6 Temperature Range - Operating: 150°C (TJ) Case / Package: 6-XFDFN Exposed Pad ECCN: EAR99 Fake Threat In the Open Market: 84 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Other Part Number: 568-12527-2,1727-224 4-6,568-12527-6,568- 12527-2-ND,568-12527 -1-ND,1727-2244-2,93 4068722147,1727-2244 -1,568-12527-6-ND,56 8-12527-1 Base Product Number: BC847 RoHS Status: ROHS3 Compliant

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325638-BC847QASZ
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Packaging: Reel - TR
Standard Package: 5,000
Mounting: Surface Mount
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010B-6
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-XFDFN Exposed Pad
ECCN: EAR99
Fake Threat In the Open Market: 84
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: 568-12527-2,1727-2244-6,568-12527-6,568-12527-2-ND,568-12527-1-ND,1727-2244-2,934068722147,1727-2244-1,568-12527-6-ND,568-12527-1
Base Product Number: BC847
RoHS Status: ROHS3 Compliant

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
BC847QASZ
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT BC847QASZ
45V 350mW 200@2mA,5V 200mA 2 NPN DFN-6(1x1) Bipolar Transistors - BJT ROHS

45V 350mW 200@2mA,5V 200mA 2 NPN DFN-6(1x1) Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet
Discrete Semiconductor - BC847QASZ - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
BC847QASZ
Discrete Semiconductor BC847QASZ
TRANS 2NPN 45V 0.1A DFN1010B-6

TRANS 2NPN 45V 0.1A DFN1010B-6

Supplier's Site Datasheet
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2244-2-ND
Bipolar Transistor Arrays 1727-2244-2-ND
TRANS 2NPN 45V 0.1A DFN1010B-6

TRANS 2NPN 45V 0.1A DFN1010B-6

Supplier's Site Datasheet
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2244-6-ND
Bipolar Transistor Arrays 1727-2244-6-ND
TRANS 2NPN 45V 0.1A DFN1010B-6

TRANS 2NPN 45V 0.1A DFN1010B-6

Supplier's Site Datasheet
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2244-1-ND
Bipolar Transistor Arrays 1727-2244-1-ND
TRANS 2NPN 45V 0.1A DFN1010B-6

TRANS 2NPN 45V 0.1A DFN1010B-6

Supplier's Site Datasheet
Bipolar Transistor Array, Dual Npn, 45 V, 350 Mw, 100 Ma, 200, Dfn1010B Rohs Compliant Nexperia - 68Y7600 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor Array, Dual Npn, 45 V, 350 Mw, 100 Ma, 200, Dfn1010B Rohs Compliant Nexperia
68Y7600
Bipolar Transistor Array, Dual Npn, 45 V, 350 Mw, 100 Ma, 200, Dfn1010B Rohs Compliant Nexperia 68Y7600
Bipolar Transistor Array, Dual NPN, 45 V, 350 mW, 100 mA, 200, DFN1010B RoHS Compliant: Yes

Bipolar Transistor Array, Dual NPN, 45 V, 350 mW, 100 mA, 200, DFN1010B RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Win Source Electronics LCSC Electronics Technology (HK) Limited LIXINC Electronics Co., Limited DigiKey Newark, An Avnet Company
Product Category Bipolar RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BC847QASZ BC847QASZ BC847QASZ BC847QASZ 1325638-BC847QASZ BC847QASZ BC847QASZ 1727-2244-2-ND 68Y7600
Product Name 45 V, 200 mA NPN/NPN general-purpose transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT Discrete Semiconductor Bipolar Transistor Arrays Bipolar Transistor Array, Dual Npn, 45 V, 350 Mw, 100 Ma, 200, Dfn1010B Rohs Compliant Nexperia
Package Type DFN1010B-6 (SOT1216) SOT1216 AEC-Q101 SOT3; 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad 6-XFDFN Exposed Pad TO-3
Packing Method Tape Reel Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)Cut Tape (CT)Digi-Reel庐
IC(max) 200 milliamps 100 milliamps 100 milliamps 200 milliamps 100 milliamps
VCEO 45 volts 45 volts 45 volts 45 volts
PD 230 milliwatts 350 milliwatts
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