Nexperia B.V. 45 V, 500 mA NPN/NPN general-purpose double transistors BC817RAZ

Description
NPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC807RA NPN/PNP complement: BC817RAPN Features and benefits Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified Applications General-purpose switching and amplification Mobile applications
Request a Quote Datasheet
Description
NPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC807RA NPN/PNP complement: BC817RAPN Features and benefits Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified Applications General-purpose switching and amplification Mobile applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
45 V, 500 mA NPN/NPN general-purpose double transistors - BC817RAZ - Nexperia B.V.
Nijmegen, Netherlands
45 V, 500 mA NPN/NPN general-purpose double transistors
BC817RAZ
45 V, 500 mA NPN/NPN general-purpose double transistors BC817RAZ
NPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC807RA NPN/PNP complement: BC817RAPN Features and benefits Reduces component count Reduces pick and place costs Low package height of 0.5 mm AEC-Q101 qualified Applications General-purpose switching and amplification Mobile applications

NPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package.

PNP/PNP complement: BC807RA

NPN/PNP complement: BC817RAPN

Features and benefits

  • Reduces component count
  • Reduces pick and place costs
  • Low package height of 0.5 mm
  • AEC-Q101 qualified

Applications

  • General-purpose switching and amplification
  • Mobile applications
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-7383-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-7383-2-ND
Bipolar Transistor Arrays 1727-7383-2-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 500mA 100MHz 350mW Surface Mount DFN1412-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 500mA 100MHz 350mW Surface Mount DFN1412-6

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-7383-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-7383-1-ND
Bipolar Transistor Arrays 1727-7383-1-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 500mA 100MHz 350mW Surface Mount DFN1412-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 500mA 100MHz 350mW Surface Mount DFN1412-6

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-7383-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-7383-6-ND
Bipolar Transistor Arrays 1727-7383-6-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 500mA 100MHz 350mW Surface Mount DFN1412-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 500mA 100MHz 350mW Surface Mount DFN1412-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 961975-BC817RAZ - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
961975-BC817RAZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 961975-BC817RAZ
Win Source Part Number: 961975-BC817RAZ Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 45V Current - Collector (Ic) (Max): 500mA Transistor Type: 2 NPN (Dual) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1412-6 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: Nexperia USA Inc. Other Names: 1727-7383-6,BC817RAZ -ND,1727-7383-2,1727 -7383-1,934070165147 Base Product Number: BC817

Win Source Part Number: 961975-BC817RAZ
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 500mA
Transistor Type: 2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1412-6
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Nexperia USA Inc.
Other Names: 1727-7383-6,BC817RAZ-ND,1727-7383-2,1727-7383-1,934070165147
Base Product Number: BC817

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC817RAZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC817RAZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC817RAZ
BC817RA/SOT1268/DFN1 412-6

BC817RA/SOT1268/DFN1412-6

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC817RAZ
Bipolar Transistors - BJT BC817RAZ
Bipolar Transistors - BJT BC817RA/SOT1268 DFN1412-6

Bipolar Transistors - BJT BC817RA/SOT1268 DFN1412-6

Buy Now Datasheet
Transistor Array, Aec-Q101, 45V, Dfn1412; Transistor Polarity Nexperia - 37AC0523 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Aec-Q101, 45V, Dfn1412; Transistor Polarity Nexperia
37AC0523
Transistor Array, Aec-Q101, 45V, Dfn1412; Transistor Polarity Nexperia 37AC0523
TRANSISTOR ARRAY, AEC-Q101, 45V, DFN1412; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:500mW; DC Collector Current:500mA; DC Current Gain hFE:40hFE; Transistor Case Style:DFN1412; No. of RoHS Compliant: Yes

TRANSISTOR ARRAY, AEC-Q101, 45V, DFN1412; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:500mW; DC Collector Current:500mA; DC Current Gain hFE:40hFE; Transistor Case Style:DFN1412; No. of RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number BC817RAZ 1727-7383-2-ND 961975-BC817RAZ BC817RAZ BC817RAZ 37AC0523
Product Name 45 V, 500 mA NPN/NPN general-purpose double transistors Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT Transistor Array, Aec-Q101, 45V, Dfn1412; Transistor Polarity Nexperia
Polarity NPN NPN NPN
Package Type SOT1268 6-XFDFN Exposed Pad SOT3 AEC-Q100 TO-3
IC(max) 500 milliamps 500 milliamps 500 milliamps
VCEO 45 volts 45 volts
PD 350 milliwatts
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