Nexperia B.V. BC817DPN/DG/B3,115

Description
Small Signal Bipolar Transistor, 0.5A, 45V, 2-Element, NPN and PNP
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Description
Small Signal Bipolar Transistor, 0.5A, 45V, 2-Element, NPN and PNP
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Datasheet
Datasheet Summary
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NPN general-purpose transistor for switching and amplification, available in SOT23, SOT323, and SOT54 (TO-92) packages, with a collector-emitter voltage rating of 45 V, continuous collector current of 500 mA, and peak collector current of 1 A. Maximum power dissipation is 250 mW for SOT23, 200 mW for SOT323, and 625 mW for SOT54. Thermal resistance from junction to ambient is 500 K/W for SOT23, 625 K/W for SOT323, and 200 K/W for SOT54. DC current gain ranges from 100 to 600 depending on selection grade. Operating junction temperature ranges from -65 °C to 150 °C. Complies with IEC 60134 absolute maximum rating system.

Datasheet Summary
Powered by GS/AI

NPN general-purpose transistor for switching and amplification, available in SOT23, SOT323, and SOT54 (TO-92) packages, with a collector-emitter voltage rating of 45 V, continuous collector current of 500 mA, and peak collector current of 1 A. Maximum power dissipation is 250 mW for SOT23, 200 mW for SOT323, and 625 mW for SOT54. Thermal resistance from junction to ambient is 500 K/W for SOT23, 625 K/W for SOT323, and 200 K/W for SOT54. DC current gain ranges from 100 to 600 depending on selection grade. Operating junction temperature ranges from -65 °C to 150 °C. Complies with IEC 60134 absolute maximum rating system.

Suppliers

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 - BC817DPN/DG/B3,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A, 45V, 2-Element, NPN and PNP

Small Signal Bipolar Transistor, 0.5A, 45V, 2-Element, NPN and PNP

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BC817DPN/DG/B3,115
Polarity NPN; PNP
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