PNP medium power transistor in an ultra thin DFN2020D-3 (SOT1061D) leadless SMD plastic package with exposed heat sink, rated for a collector-emitter voltage of -60 V, a continuous collector current of -1 A, and a peak collector current of -2 A. The device offers a DC current gain (hFE) range of 100 to 250 at VCE = -2 V and IC = -150 mA, with a collector-emitter saturation voltage of up to 500 mV at IC = -500 mA and IB = -50 mA. It supports junction temperatures up to 150 °C and is suitable for applications including voltage regulators, battery-powered devices, and high-side switches.
PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.
Features and benefits
Applications
Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount DFN2020D-3
Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount DFN2020D-3
Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount DFN2020D-3
TRANS PNP 60V 1A DFN2020D-3
Bipolar Transistors - BJT 1A PNP Medium Power Transistors
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BC52-16PASX | 1727-2423-2-ND | BC52-16PASX | BC52-16PASX |
| Product Name | 60 V, 1 A PNP medium power transistors | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Package Type | SOT1061D SOT1061D | 3-UDFN Exposed Pad |
