Nexperia B.V. Low-leakage quadruple diode BAV199S-QZ

Description
High-speed quadruple switching diode, encapsulated in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low leakage current applications in surface mounted circuits
Request a Quote Datasheet
Description
High-speed quadruple switching diode, encapsulated in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low leakage current applications in surface mounted circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Low-leakage quadruple diode - BAV199S-QZ - Nexperia B.V.
Nijmegen, Netherlands
Low-leakage quadruple diode
BAV199S-QZ
Low-leakage quadruple diode BAV199S-QZ
High-speed quadruple switching diode, encapsulated in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low leakage current applications in surface mounted circuits

High-speed quadruple switching diode, encapsulated in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Plastic SMD package
  • Low leakage current: typ. 3 pA
  • Switching time: typ. 0.8 µs
  • Continuous reverse voltage: max. 75 V
  • Repetitive peak reverse voltage: max. 85 V
  • Repetitive peak forward current: max. 500 mA
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Low leakage current applications in surface mounted circuits
Supplier's Site Datasheet
Diode Arrays - 1727-BAV199S-QZCT-ND - DigiKey
Thief River Falls, MN, United States
DIODE ARRAY GP 75V 215MA 6-TSSOP

DIODE ARRAY GP 75V 215MA 6-TSSOP

Buy Now Datasheet
Diode Arrays - 1727-BAV199S-QZTR-ND - DigiKey
Thief River Falls, MN, United States
DIODE ARRAY GP 75V 215MA 6-TSSOP

DIODE ARRAY GP 75V 215MA 6-TSSOP

Buy Now Datasheet
Diode Arrays - 1727-BAV199S-QZDKR-ND - DigiKey
Thief River Falls, MN, United States
DIODE ARRAY GP 75V 215MA 6-TSSOP

DIODE ARRAY GP 75V 215MA 6-TSSOP

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Diodes Diode Arrays
Product Number BAV199S-QZ 1727-BAV199S-QZCT-ND
Product Name Low-leakage quadruple diode Diode Arrays
Diode Applications Low Leakage
RoHS Compliant RoHS
VF 0.9000 to 9.00E-4 volts
IF 215 mA
VR 75 volts
Unlock Full Specs
to access all available technical data