Nexperia B.V. 30 V, 200 mA Schottky barrier diode BAT54GWF

Description
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. Features and benefits Low forward voltage: VF ≤ 400 mV Low leakage current: IR ≤ 2 µA Reverse voltage VR ≤ 30 V Low capacitance Small SMD plastic package Applications Ultra high-speed switching Line termination
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Description
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. Features and benefits Low forward voltage: VF ≤ 400 mV Low leakage current: IR ≤ 2 µA Reverse voltage VR ≤ 30 V Low capacitance Small SMD plastic package Applications Ultra high-speed switching Line termination
Request a Quote Datasheet

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30 V, 200 mA Schottky barrier diode - BAT54GWF - Nexperia B.V.
Nijmegen, Netherlands
30 V, 200 mA Schottky barrier diode
BAT54GWF
30 V, 200 mA Schottky barrier diode BAT54GWF
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. Features and benefits Low forward voltage: VF ≤ 400 mV Low leakage current: IR ≤ 2 µA Reverse voltage VR ≤ 30 V Low capacitance Small SMD plastic package Applications Ultra high-speed switching Line termination

Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low forward voltage: VF ≤ 400 mV
  • Low leakage current: IR ≤ 2 µA
  • Reverse voltage VR ≤ 30 V
  • Low capacitance
  • Small SMD plastic package

Applications

  • Ultra high-speed switching
  • Line termination
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Schottky Diodes
Product Number BAT54GWF
Product Name 30 V, 200 mA Schottky barrier diode
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