Nexperia B.V. Low-power 2-input NAND gate (open drain) 74AUP1G38GW,125

The 74AUP1G38 is a single 2-input NAND gate with open-drain output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire V_CC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using I_OFF. The I_OFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

Features and benefits

• Wide supply voltage range from 0.8 V to 3.6 V
• CMOS low power dissipation
• High noise immunity
• Complies with JEDEC standards:
• JESD8-12 (0.8 V to 1.3 V)
• JESD8-11 (0.9 V to 1.65 V)
• JESD8-7 (1.65 V to 1.95 V)
• JESD8-5 (2.3 V to 2.7 V)
• JESD8C (2.7 V to 3.6 V)
• Low static power consumption; I_CC = 0.9 μA (maximum)
• Latch-up performance exceeds 100 mA per JESD 78 Class II
• Overvoltage tolerant inputs to 3.6 V
• Low noise overshoot and undershoot < 10 % of V_CC
• I_OFF circuitry provides partial Power-down mode operation
• ESD protection:
• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
• Multiple package options
• Specified from -40 °C to +85 °C and -40 °C to +125 °C

NAND Gate, AUP/ULP/V Series, 1-Func, CMOS, PDSO5

IC GATE NAND 1CH 2-INP 5TSSOP

IC GATE NAND 1CH 2-INP 5TSSOP

NAND Gate IC 1 Channel Open Drain 5-TSSOP