Dual N-channel enhancement mode MOSFET in a TSSOP6 (SOT363) surface-mounted package measuring 2.1 mm x 1.25 mm x 0.95 mm, rated for 60 V drain-source voltage and 320 mA continuous drain current per transistor at 25 °C, with a drain-source on-state resistance of 1.6 Ω at 10 V gate-source voltage and 500 mA drain current. AEC-Q101 qualified for automotive applications, suitable for low-side switching and high-speed line driving.
NOW NEXPERIA 2N7002PS - SMALL SI
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2N7002PS115 |
| Product Name | FET, MOSFET Arrays |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
