Dual N-channel enhancement mode Field-Effect Transistor (FET) in a TSSOP6 (SOT363) surface-mounted package measuring 2.1 mm × 1.25 mm × 0.95 mm, using Trench MOSFET technology. Each transistor supports a drain-source voltage of 60 V, a continuous drain current of 320 mA at 25 °C, and a drain-source on-state resistance of up to 1.6 Ω at V</em>GS = 10 V and I<em>D = 500 mA. The device is AEC-Q101 qualified and features logic-level compatibility and very fast switching, suitable for relay driver, high-speed line driver, low-side load switch, and switching circuit applications.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
MOSFET 2N-CH 60V 0.32A 6TSSOP
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 2N7002PS,125 | 1727-1248-2-ND | 2N7002PS,125 |
| Product Name | 60 V, 320 mA dual N-channel Trench MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | 60 volts | ||
| IDSS | 320000 milliamps | ||
| VGS(off) | 20 volts | ||
| PD | 280 milliwatts |
