Dual N-channel enhancement mode Field-Effect Transistor (FET) in a TSSOP6 (SOT363) surface-mounted package measuring 2.1 mm × 1.25 mm × 0.95 mm, using Trench MOSFET technology with logic-level compatibility and ESD protection. Each transistor supports a drain-source voltage of 60 V, a continuous drain current of 220 mA at 25 °C, and a junction temperature up to 175 °C. The device has a drain-source on-state resistance of 2.2 Ω to 3 Ω at 10 V gate drive and 25 °C. It is AEC-Q101 qualified for automotive applications.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 2N7002AKS-QH | 1727-2N7002AKS-QHCT-ND |
| Product Name | 60 V, dual N-channel Trench MOSFET | FET, MOSFET Arrays |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 60 volts | |
| IDSS | 220000 milliamps | |
| VGS(off) | 20 volts |
