60 V, N-channel Trench MOSFET in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package with dimensions of 1.1 mm x 1 mm x 0.48 mm. Features logic-level compatibility, an extended junction temperature range of 175 °C, ESD protection up to 500 V HBM, side wettable flanks for optical solder inspection, and AEC-Q101 qualification. Maximum continuous drain current is 340 mA at 25 °C ambient with a drain pad area of 1 cm² on FR4 PCB. Drain-source on-state resistance is 2.1 Ω to 2.8 Ω at V<sub>GS</sub> = 10 V and I<sub>D</sub> = 100 mA. Total power dissipation is 490 mW at 25 °C ambient.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
2N7002AKQB-Q/SOT8015
2N7002AKQB-Q/SOT8015
2N7002AKQB-Q/SOT8015
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 2N7002AKQB-QZ | 1727-2N7002AKQB-QZCT-ND |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 60 volts | |
| IDSS | 340000 milliamps | |
| VGS(off) | 20 volts | |
| PD | 490 milliwatts |
