California Eastern Laboratories - CEL Bipolar RF Transistors UPA895TS-A

NPN silicon RF twin transistor with two integrated 2SC5800 elements in a 6-pin super lead-less minimold package, designed for oscillator applications. It operates at a maximum collector-to-emitter voltage of 5.5 V and a collector current of 100 mA, with a total power dissipation of 130 mW for two elements. The gain-bandwidth product is 6.5 GHz typ. at VCE = 1 V, IC = 15 mA, and insertion power gain is 5.5 dB typ. at 2 GHz. Reverse transfer capacitance is 0.6 to 0.8 pF. The device is rated for a junction temperature up to 150°C.