California Eastern Laboratories - CEL Bipolar RF Transistors UPA814T-A

The UPA814T-A is a dual NPN silicon RF transistor in a 6-pin SMT package measuring 2.0 mm by 1.25 mm, designed for handheld wireless applications. Each transistor has a gain bandwidth product of 9 GHz and a typical noise figure of 1.5 dB at 2 GHz with a collector current of 7 mA. The device supports collector currents up to 100 mA and operates with a maximum collector-to-emitter voltage of 6 V. The package is RoHS-compliant, with Pb-free terminals.